JPS51117581A - Manufacturing method of mos type semiconductor equipment - Google Patents
Manufacturing method of mos type semiconductor equipmentInfo
- Publication number
- JPS51117581A JPS51117581A JP4249575A JP4249575A JPS51117581A JP S51117581 A JPS51117581 A JP S51117581A JP 4249575 A JP4249575 A JP 4249575A JP 4249575 A JP4249575 A JP 4249575A JP S51117581 A JPS51117581 A JP S51117581A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- type semiconductor
- mos type
- semiconductor equipment
- equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve on the threshold voltage control of the Si gate MOS device.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4249575A JPS51117581A (en) | 1975-04-07 | 1975-04-07 | Manufacturing method of mos type semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4249575A JPS51117581A (en) | 1975-04-07 | 1975-04-07 | Manufacturing method of mos type semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51117581A true JPS51117581A (en) | 1976-10-15 |
Family
ID=12637628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4249575A Pending JPS51117581A (en) | 1975-04-07 | 1975-04-07 | Manufacturing method of mos type semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51117581A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5377182A (en) * | 1976-12-20 | 1978-07-08 | Fujitsu Ltd | Production of mos type semiconductor device |
-
1975
- 1975-04-07 JP JP4249575A patent/JPS51117581A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5377182A (en) * | 1976-12-20 | 1978-07-08 | Fujitsu Ltd | Production of mos type semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS52156576A (en) | Production of mis semiconductor device | |
| JPS5227302A (en) | Station selecting device | |
| JPS51135373A (en) | Semiconductor device | |
| JPS5222480A (en) | Insulating gate field effect transistor | |
| JPS51114079A (en) | Construction of semiconductor memory device | |
| JPS51111042A (en) | Gate circuit | |
| JPS5222481A (en) | Method of manufacturing semiconductor device | |
| JPS5215274A (en) | Semiconductor device | |
| JPS5211776A (en) | Method of manufacturing semiconductor device | |
| JPS538072A (en) | Semiconductor device | |
| JPS51113478A (en) | The manufacturing method of semiconductor device | |
| JPS5223274A (en) | Self-matching type semiconductor device | |
| JPS5214379A (en) | Method for production of insulated gate semiconductor integrated circuit device | |
| JPS526086A (en) | Production method of semiconductor device | |
| JPS51147188A (en) | Semicoductor device | |
| JPS524789A (en) | Semiconductor equipment | |
| JPS52156574A (en) | Mis type semiconductor device | |
| JPS52105782A (en) | Semiconductor device | |
| JPS51126772A (en) | Electrolytic effect type semiconductor unit | |
| JPS52179A (en) | Method of fabricating semiconductor | |
| JPS51138166A (en) | Production method of semiconductor device | |
| JPS5270778A (en) | Semiconductor device | |
| JPS5248479A (en) | Semiconductor device and process for production of the same | |
| JPS5318983A (en) | Mis field effect type semiconductor device | |
| JPS5289482A (en) | Semiconductor device |