JPS526086A - Production method of semiconductor device - Google Patents

Production method of semiconductor device

Info

Publication number
JPS526086A
JPS526086A JP50082389A JP8238975A JPS526086A JP S526086 A JPS526086 A JP S526086A JP 50082389 A JP50082389 A JP 50082389A JP 8238975 A JP8238975 A JP 8238975A JP S526086 A JPS526086 A JP S526086A
Authority
JP
Japan
Prior art keywords
semiconductor device
production method
shoeter
mosfet
enlarging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50082389A
Other languages
Japanese (ja)
Inventor
Kazuhiro Shimotori
Kenji Anami
Isao Okura
Masashi Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50082389A priority Critical patent/JPS526086A/en
Publication of JPS526086A publication Critical patent/JPS526086A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: In order to realize shoeter channel, without enlarging the feedback capacity of MOSFET between gate-drain.
COPYRIGHT: (C)1977,JPO&Japio
JP50082389A 1975-07-03 1975-07-03 Production method of semiconductor device Pending JPS526086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50082389A JPS526086A (en) 1975-07-03 1975-07-03 Production method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50082389A JPS526086A (en) 1975-07-03 1975-07-03 Production method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS526086A true JPS526086A (en) 1977-01-18

Family

ID=13773209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50082389A Pending JPS526086A (en) 1975-07-03 1975-07-03 Production method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS526086A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106871A (en) * 1981-12-18 1983-06-25 Nec Corp Semiconductor device
JPH01151267A (en) * 1987-12-08 1989-06-14 Matsushita Electron Corp Manufacture of mos semiconductor device
US4961101A (en) * 1987-04-21 1990-10-02 Fuji Xerox Co., Ltd. Semiconductor MOSFET device with offset regions

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106871A (en) * 1981-12-18 1983-06-25 Nec Corp Semiconductor device
US4961101A (en) * 1987-04-21 1990-10-02 Fuji Xerox Co., Ltd. Semiconductor MOSFET device with offset regions
US5057445A (en) * 1987-04-21 1991-10-15 Kyocera Corporation Method of making a high-voltage, low on-resistance igfet
JPH01151267A (en) * 1987-12-08 1989-06-14 Matsushita Electron Corp Manufacture of mos semiconductor device

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