JPS51135375A - Method of manufacturing junction type field effect transistor - Google Patents

Method of manufacturing junction type field effect transistor

Info

Publication number
JPS51135375A
JPS51135375A JP50060380A JP6038075A JPS51135375A JP S51135375 A JPS51135375 A JP S51135375A JP 50060380 A JP50060380 A JP 50060380A JP 6038075 A JP6038075 A JP 6038075A JP S51135375 A JPS51135375 A JP S51135375A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
junction type
manufacturing junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50060380A
Other languages
Japanese (ja)
Inventor
Kuni Ogawa
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50060380A priority Critical patent/JPS51135375A/en
Publication of JPS51135375A publication Critical patent/JPS51135375A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To form longitudinal, multi-channel VFET so that its gate series resistance is small, the withstand voltage between the gate and source is large and the channel width and gate length are controlled with ease.
COPYRIGHT: (C)1976,JPO&Japio
JP50060380A 1975-05-19 1975-05-19 Method of manufacturing junction type field effect transistor Pending JPS51135375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50060380A JPS51135375A (en) 1975-05-19 1975-05-19 Method of manufacturing junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50060380A JPS51135375A (en) 1975-05-19 1975-05-19 Method of manufacturing junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS51135375A true JPS51135375A (en) 1976-11-24

Family

ID=13140466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50060380A Pending JPS51135375A (en) 1975-05-19 1975-05-19 Method of manufacturing junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS51135375A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5621377A (en) * 1979-07-31 1981-02-27 Tohoku Metal Ind Ltd High-frequency high-power semiconductor device
JPS5666076A (en) * 1979-11-02 1981-06-04 Tohoku Metal Ind Ltd Semiconductor device
JPS61104672A (en) * 1984-10-29 1986-05-22 Res Dev Corp Of Japan Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968658A (en) * 1972-11-04 1974-07-03
JPS49134280A (en) * 1973-04-25 1974-12-24

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968658A (en) * 1972-11-04 1974-07-03
JPS49134280A (en) * 1973-04-25 1974-12-24

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5621377A (en) * 1979-07-31 1981-02-27 Tohoku Metal Ind Ltd High-frequency high-power semiconductor device
JPS5666076A (en) * 1979-11-02 1981-06-04 Tohoku Metal Ind Ltd Semiconductor device
JPS61104672A (en) * 1984-10-29 1986-05-22 Res Dev Corp Of Japan Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS5222480A (en) Insulating gate field effect transistor
JPS51114074A (en) Insulation gate type field effect transistor
JPS53133379A (en) Junction-type field effect transistor
JPS5315081A (en) Junction type field effect transistor and its production
JPS51135375A (en) Method of manufacturing junction type field effect transistor
JPS53142189A (en) Insulating gate type field effect transistor
JPS5382179A (en) Field effect transistor
JPS52117586A (en) Semiconductor device
JPS544083A (en) Longitudinal field effect transistor and its manufacture
JPS5263074A (en) Insulated gate type field effect transistor and its production
JPS5299787A (en) Junction type field effect transistor and its production
JPS5245280A (en) Field effect transistor of schottky barrier type
JPS53143177A (en) Production of field effect transistor
JPS5426667A (en) Measuring method for various parameters of field effect transistor
JPS52128080A (en) Junction-type field effect transistor
JPS51135379A (en) Method of manufacturing junction type field effect transistors
JPS5247684A (en) Floating gate type transistor
JPS5245281A (en) Field effect transistor of vertical junction type
JPS538077A (en) Field effect transistor and its production
JPS5419678A (en) Insulated gate field effect transistor
JPS5279881A (en) Production of gaas schottky barrier gate type field effect transistor
JPS5242080A (en) Micro channel type insulated gate field effect transistor and process for productin thereof
JPS5435684A (en) Junction type field effect transistor
JPS5421284A (en) Field effect transistor of longitudinal junction type
JPS53116080A (en) Transistor and its manufacture