JPS538077A - Field effect transistor and its production - Google Patents

Field effect transistor and its production

Info

Publication number
JPS538077A
JPS538077A JP8235176A JP8235176A JPS538077A JP S538077 A JPS538077 A JP S538077A JP 8235176 A JP8235176 A JP 8235176A JP 8235176 A JP8235176 A JP 8235176A JP S538077 A JPS538077 A JP S538077A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
fet
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8235176A
Other languages
Japanese (ja)
Inventor
Hiroshi Kadota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8235176A priority Critical patent/JPS538077A/en
Publication of JPS538077A publication Critical patent/JPS538077A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Abstract

PURPOSE:To improve the controllability of the gate electrode of a short channel FET by providing an insulation layer under the channel of the FET.
JP8235176A 1976-07-09 1976-07-09 Field effect transistor and its production Pending JPS538077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8235176A JPS538077A (en) 1976-07-09 1976-07-09 Field effect transistor and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8235176A JPS538077A (en) 1976-07-09 1976-07-09 Field effect transistor and its production

Publications (1)

Publication Number Publication Date
JPS538077A true JPS538077A (en) 1978-01-25

Family

ID=13772138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8235176A Pending JPS538077A (en) 1976-07-09 1976-07-09 Field effect transistor and its production

Country Status (1)

Country Link
JP (1) JPS538077A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732673A (en) * 1980-08-06 1982-02-22 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPS59138377A (en) * 1983-01-28 1984-08-08 Agency Of Ind Science & Technol MIS transistor and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732673A (en) * 1980-08-06 1982-02-22 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPS59138377A (en) * 1983-01-28 1984-08-08 Agency Of Ind Science & Technol MIS transistor and its manufacturing method

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