JPS51135381A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
JPS51135381A
JPS51135381A JP6043775A JP6043775A JPS51135381A JP S51135381 A JPS51135381 A JP S51135381A JP 6043775 A JP6043775 A JP 6043775A JP 6043775 A JP6043775 A JP 6043775A JP S51135381 A JPS51135381 A JP S51135381A
Authority
JP
Japan
Prior art keywords
gate
manufacturing
semiconductor device
area
patential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6043775A
Other languages
Japanese (ja)
Other versions
JPS5619112B2 (en
Inventor
Toshiharu Yamaguchi
Susumu Sugumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP6043775A priority Critical patent/JPS51135381A/en
Publication of JPS51135381A publication Critical patent/JPS51135381A/en
Publication of JPS5619112B2 publication Critical patent/JPS5619112B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase the essential impurity density of the gate area and to prevent any patential distribution by the gate current by enlarging cross sectional area of the gate gril in the longitudinal type multichannel JFET.
COPYRIGHT: (C)1976,JPO&Japio
JP6043775A 1975-05-19 1975-05-19 Semiconductor device and its manufacturing method Granted JPS51135381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6043775A JPS51135381A (en) 1975-05-19 1975-05-19 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6043775A JPS51135381A (en) 1975-05-19 1975-05-19 Semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS51135381A true JPS51135381A (en) 1976-11-24
JPS5619112B2 JPS5619112B2 (en) 1981-05-06

Family

ID=13142229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6043775A Granted JPS51135381A (en) 1975-05-19 1975-05-19 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS51135381A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02181972A (en) * 1989-01-09 1990-07-16 Komatsu Ltd Semiconductor device and manufacture thereof
WO2004010489A1 (en) * 2002-07-24 2004-01-29 Sumitomo Electric Industries, Ltd. Vertical junction field effect transistor and method for fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138882A (en) * 1974-09-27 1976-03-31 Tokyo Shibaura Electric Co MARUCHICHANERUTATEGATADENKAIKOKATORANJISUTA

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138882A (en) * 1974-09-27 1976-03-31 Tokyo Shibaura Electric Co MARUCHICHANERUTATEGATADENKAIKOKATORANJISUTA

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02181972A (en) * 1989-01-09 1990-07-16 Komatsu Ltd Semiconductor device and manufacture thereof
WO2004010489A1 (en) * 2002-07-24 2004-01-29 Sumitomo Electric Industries, Ltd. Vertical junction field effect transistor and method for fabricating the same
US7282760B2 (en) 2002-07-24 2007-10-16 Sumitomo Electric Industries, Ltd. Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors
CN100349270C (en) * 2002-07-24 2007-11-14 住友电气工业株式会社 Vertical junction field-effect transistor and method of manufacturing the same
US7750377B2 (en) 2002-07-24 2010-07-06 Sumitomo Electric Industries, Ltd. Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors

Also Published As

Publication number Publication date
JPS5619112B2 (en) 1981-05-06

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