JPS51136290A - Short emitter type thyristor - Google Patents

Short emitter type thyristor

Info

Publication number
JPS51136290A
JPS51136290A JP50059607A JP5960775A JPS51136290A JP S51136290 A JPS51136290 A JP S51136290A JP 50059607 A JP50059607 A JP 50059607A JP 5960775 A JP5960775 A JP 5960775A JP S51136290 A JPS51136290 A JP S51136290A
Authority
JP
Japan
Prior art keywords
emitter type
type thyristor
short emitter
short
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50059607A
Other languages
Japanese (ja)
Inventor
Hiroshi Fukui
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50059607A priority Critical patent/JPS51136290A/en
Publication of JPS51136290A publication Critical patent/JPS51136290A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:Prevention for conductive area concentration and element degradation by properly shaping the base layer formed in adjacent to cathode side emitter.
JP50059607A 1975-05-21 1975-05-21 Short emitter type thyristor Pending JPS51136290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50059607A JPS51136290A (en) 1975-05-21 1975-05-21 Short emitter type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50059607A JPS51136290A (en) 1975-05-21 1975-05-21 Short emitter type thyristor

Publications (1)

Publication Number Publication Date
JPS51136290A true JPS51136290A (en) 1976-11-25

Family

ID=13118100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50059607A Pending JPS51136290A (en) 1975-05-21 1975-05-21 Short emitter type thyristor

Country Status (1)

Country Link
JP (1) JPS51136290A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222571A (en) * 1982-06-19 1983-12-24 Mitsubishi Electric Corp Thyristor
US20130105857A1 (en) * 2010-06-21 2013-05-02 Abb Technology Ag Phase control thyristor with improved pattern of local emitter shorts dots

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222571A (en) * 1982-06-19 1983-12-24 Mitsubishi Electric Corp Thyristor
US20130105857A1 (en) * 2010-06-21 2013-05-02 Abb Technology Ag Phase control thyristor with improved pattern of local emitter shorts dots
US9142656B2 (en) * 2010-06-21 2015-09-22 Abb Technology Ag Phase control thyristor with improved pattern of local emitter shorts dots

Similar Documents

Publication Publication Date Title
NL7611938A (en) OXIDE REGION IN SEMICONDUCTOR PLATE.
NL188154C (en) ENVELOPE COMPOSITION WITH ANSWER ENVELOPE.
JPS51126761A (en) Schottky barrier type semi-conductor unit
JPS51151090A (en) Semiconductor laser apparatus and its manufacturing method
NL7610315A (en) BIPOLAR ELECTROLYZER.
JPS51150284A (en) Semiconductor unvolatile memory unit
NL167207B (en) ELECTROLYSIS CELL WITH BIPOLAR ELECTRODES.
JPS5269281A (en) Gate turn-off thyristor
JPS5249767A (en) Semiconductor device
JPS53134374A (en) Semiconductor device
JPS5751928B2 (en)
JPS51128266A (en) Semiconductor unit
NL7410288A (en) CONTACT DEVICE WITH SHIELD ELECTRODE.
JPS5247683A (en) Semiconductor device
JPS5230178A (en) Semiconductor unit
JPS5419679A (en) Thyristor
JPS5214377A (en) Semiconductor device
JPS5226166A (en) Semi-conductor unit
JPS5231691A (en) Semiconductor luminous device
JPS5264283A (en) Transistor
JPS539485A (en) Mesa type semiconductor device
JPS5380173A (en) Two way thyristor
JPS5222890A (en) Lateral n-gate thyristor manufacturing system
JPS51135542A (en) Semiconductor device
JPS51144136A (en) Matrix circuit