JPS51137393A - Manufacturing method for semiconductor light emitting device - Google Patents

Manufacturing method for semiconductor light emitting device

Info

Publication number
JPS51137393A
JPS51137393A JP6165775A JP6165775A JPS51137393A JP S51137393 A JPS51137393 A JP S51137393A JP 6165775 A JP6165775 A JP 6165775A JP 6165775 A JP6165775 A JP 6165775A JP S51137393 A JPS51137393 A JP S51137393A
Authority
JP
Japan
Prior art keywords
manufacturing
light emitting
emitting device
semiconductor light
semiconductor base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6165775A
Other languages
Japanese (ja)
Inventor
Toshio Sogo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6165775A priority Critical patent/JPS51137393A/en
Publication of JPS51137393A publication Critical patent/JPS51137393A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: Manufacturing method for a light emitting device being able to use the semiconductor base surface as 100π reflecting surface and to form ohmic electrodes very easily.
COPYRIGHT: (C)1976,JPO&Japio
JP6165775A 1975-05-22 1975-05-22 Manufacturing method for semiconductor light emitting device Pending JPS51137393A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6165775A JPS51137393A (en) 1975-05-22 1975-05-22 Manufacturing method for semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6165775A JPS51137393A (en) 1975-05-22 1975-05-22 Manufacturing method for semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS51137393A true JPS51137393A (en) 1976-11-27

Family

ID=13177503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6165775A Pending JPS51137393A (en) 1975-05-22 1975-05-22 Manufacturing method for semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS51137393A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833882A (en) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp Manufacture of light emitting diode
JPH0239578A (en) * 1988-07-29 1990-02-08 Kyocera Corp Light emitting element
WO2001091196A1 (en) * 2000-05-23 2001-11-29 Toyoda Gosei Co., Ltd. Group iii nitride compound semiconductor light-emitting device and method for producing the same
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6617668B1 (en) 1999-05-21 2003-09-09 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6645295B1 (en) 1999-05-10 2003-11-11 Toyoda Gosei Co., Ltd. Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
US6830948B2 (en) 1999-12-24 2004-12-14 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US6844246B2 (en) 2001-03-22 2005-01-18 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it
US6855620B2 (en) 2000-04-28 2005-02-15 Toyoda Gosei Co., Ltd. Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices
US6860943B2 (en) 2001-10-12 2005-03-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor
US6861305B2 (en) 2000-03-31 2005-03-01 Toyoda Gosei Co., Ltd. Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US6960485B2 (en) 2000-03-31 2005-11-01 Toyoda Gosei Co., Ltd. Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
US6967122B2 (en) 2000-03-14 2005-11-22 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor and method for manufacturing the same
US6979584B2 (en) 1999-12-24 2005-12-27 Toyoda Gosei Co, Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US7052979B2 (en) 2001-02-14 2006-05-30 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
JP2006253724A (en) * 2006-06-07 2006-09-21 Toyoda Gosei Co Ltd Iii-group nitride compound semiconductor light emitting element
US7141444B2 (en) 2000-03-14 2006-11-28 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor and III nitride compound semiconductor element
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833882A (en) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp Manufacture of light emitting diode
JPH0239578A (en) * 1988-07-29 1990-02-08 Kyocera Corp Light emitting element
US6645295B1 (en) 1999-05-10 2003-11-11 Toyoda Gosei Co., Ltd. Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
US6881651B2 (en) 1999-05-21 2005-04-19 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6617668B1 (en) 1999-05-21 2003-09-09 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6893945B2 (en) 1999-07-27 2005-05-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride group compound semiconductor
US7176497B2 (en) 1999-07-27 2007-02-13 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor
US6818926B2 (en) 1999-07-27 2004-11-16 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6930329B2 (en) 1999-07-27 2005-08-16 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6835966B2 (en) 1999-07-27 2004-12-28 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US7560725B2 (en) 1999-12-24 2009-07-14 Toyoda Gosei Co., Ltd. Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US6830948B2 (en) 1999-12-24 2004-12-14 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US6979584B2 (en) 1999-12-24 2005-12-27 Toyoda Gosei Co, Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US7141444B2 (en) 2000-03-14 2006-11-28 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor and III nitride compound semiconductor element
US7462867B2 (en) 2000-03-14 2008-12-09 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor devices and method for fabricating the same
US6967122B2 (en) 2000-03-14 2005-11-22 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor and method for manufacturing the same
US6861305B2 (en) 2000-03-31 2005-03-01 Toyoda Gosei Co., Ltd. Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US7491984B2 (en) 2000-03-31 2009-02-17 Toyoda Gosei Co., Ltd. Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US6960485B2 (en) 2000-03-31 2005-11-01 Toyoda Gosei Co., Ltd. Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
US6855620B2 (en) 2000-04-28 2005-02-15 Toyoda Gosei Co., Ltd. Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices
US6861281B2 (en) 2000-05-23 2005-03-01 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting device and method for producing the same
JP2001332762A (en) * 2000-05-23 2001-11-30 Toyoda Gosei Co Ltd Group III nitride compound semiconductor light emitting device and method of manufacturing the same
WO2001091196A1 (en) * 2000-05-23 2001-11-29 Toyoda Gosei Co., Ltd. Group iii nitride compound semiconductor light-emitting device and method for producing the same
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US7052979B2 (en) 2001-02-14 2006-05-30 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
US6844246B2 (en) 2001-03-22 2005-01-18 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it
US6860943B2 (en) 2001-10-12 2005-03-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor
JP2006253724A (en) * 2006-06-07 2006-09-21 Toyoda Gosei Co Ltd Iii-group nitride compound semiconductor light emitting element

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