JPS51138175A - Method of manufacturing charge coupled device - Google Patents

Method of manufacturing charge coupled device

Info

Publication number
JPS51138175A
JPS51138175A JP50061841A JP6184175A JPS51138175A JP S51138175 A JPS51138175 A JP S51138175A JP 50061841 A JP50061841 A JP 50061841A JP 6184175 A JP6184175 A JP 6184175A JP S51138175 A JPS51138175 A JP S51138175A
Authority
JP
Japan
Prior art keywords
coupled device
charge coupled
manufacturing charge
electrode
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50061841A
Other languages
Japanese (ja)
Other versions
JPS5724664B2 (en
Inventor
Akira Takei
Yoshihiko Higa
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50061841A priority Critical patent/JPS51138175A/en
Publication of JPS51138175A publication Critical patent/JPS51138175A/en
Publication of JPS5724664B2 publication Critical patent/JPS5724664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To form an oxide film on the whole surface after forming one electrode to improve the degree of integration by overlapping the next electrode arranged on this oxide film with the previously formed electrode.
JP50061841A 1975-05-26 1975-05-26 Method of manufacturing charge coupled device Granted JPS51138175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50061841A JPS51138175A (en) 1975-05-26 1975-05-26 Method of manufacturing charge coupled device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50061841A JPS51138175A (en) 1975-05-26 1975-05-26 Method of manufacturing charge coupled device

Publications (2)

Publication Number Publication Date
JPS51138175A true JPS51138175A (en) 1976-11-29
JPS5724664B2 JPS5724664B2 (en) 1982-05-25

Family

ID=13182707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50061841A Granted JPS51138175A (en) 1975-05-26 1975-05-26 Method of manufacturing charge coupled device

Country Status (1)

Country Link
JP (1) JPS51138175A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349961A (en) * 1976-10-15 1978-05-06 Fairchild Camera Instr Co Semiconductor element structure and method of producing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966082A (en) * 1972-09-11 1974-06-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966082A (en) * 1972-09-11 1974-06-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349961A (en) * 1976-10-15 1978-05-06 Fairchild Camera Instr Co Semiconductor element structure and method of producing same

Also Published As

Publication number Publication date
JPS5724664B2 (en) 1982-05-25

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