JPS51138394A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51138394A
JPS51138394A JP6271275A JP6271275A JPS51138394A JP S51138394 A JPS51138394 A JP S51138394A JP 6271275 A JP6271275 A JP 6271275A JP 6271275 A JP6271275 A JP 6271275A JP S51138394 A JPS51138394 A JP S51138394A
Authority
JP
Japan
Prior art keywords
semiconductor device
layer
elimination
electrode
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6271275A
Other languages
Japanese (ja)
Other versions
JPS5729070B2 (en
Inventor
Hiroshi Nishi
Shigeo Osaka
Tsugio Kumai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6271275A priority Critical patent/JPS51138394A/en
Publication of JPS51138394A publication Critical patent/JPS51138394A/en
Publication of JPS5729070B2 publication Critical patent/JPS5729070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:Elimination of the effect from a degraded layer by means of the formation of an electrode on a first layer and another layer on a growing layer.
JP6271275A 1975-05-26 1975-05-26 Semiconductor device Granted JPS51138394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6271275A JPS51138394A (en) 1975-05-26 1975-05-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6271275A JPS51138394A (en) 1975-05-26 1975-05-26 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS51138394A true JPS51138394A (en) 1976-11-29
JPS5729070B2 JPS5729070B2 (en) 1982-06-21

Family

ID=13208202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6271275A Granted JPS51138394A (en) 1975-05-26 1975-05-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51138394A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712579A (en) * 1980-06-26 1982-01-22 Tokyo Inst Of Technol Buried type semiconductor laser
JPS57132387A (en) * 1981-02-09 1982-08-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
EP0547281A1 (en) * 1991-12-17 1993-06-23 International Business Machines Corporation Recessed ridge diode structure
JP2003258300A (en) * 2002-02-28 2003-09-12 Rohm Co Ltd Semiconductor light emitting device and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4865883A (en) * 1971-12-02 1973-09-10
JPS4866784A (en) * 1971-12-16 1973-09-12
JPS5140087A (en) * 1974-09-30 1976-04-03 Mitsubishi Electric Corp

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4865883A (en) * 1971-12-02 1973-09-10
JPS4866784A (en) * 1971-12-16 1973-09-12
JPS5140087A (en) * 1974-09-30 1976-04-03 Mitsubishi Electric Corp

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712579A (en) * 1980-06-26 1982-01-22 Tokyo Inst Of Technol Buried type semiconductor laser
JPS57132387A (en) * 1981-02-09 1982-08-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
EP0547281A1 (en) * 1991-12-17 1993-06-23 International Business Machines Corporation Recessed ridge diode structure
JP2003258300A (en) * 2002-02-28 2003-09-12 Rohm Co Ltd Semiconductor light emitting device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS5729070B2 (en) 1982-06-21

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