JPS51138181A - Semi-conductor device - Google Patents
Semi-conductor deviceInfo
- Publication number
- JPS51138181A JPS51138181A JP6272575A JP6272575A JPS51138181A JP S51138181 A JPS51138181 A JP S51138181A JP 6272575 A JP6272575 A JP 6272575A JP 6272575 A JP6272575 A JP 6272575A JP S51138181 A JPS51138181 A JP S51138181A
- Authority
- JP
- Japan
- Prior art keywords
- semi
- conductor device
- onto
- stratum
- lessening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000010355 oscillation Effects 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6272575A JPS51138181A (en) | 1975-05-23 | 1975-05-23 | Semi-conductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6272575A JPS51138181A (en) | 1975-05-23 | 1975-05-23 | Semi-conductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51138181A true JPS51138181A (en) | 1976-11-29 |
Family
ID=13208614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6272575A Pending JPS51138181A (en) | 1975-05-23 | 1975-05-23 | Semi-conductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51138181A (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5414694A (en) * | 1977-07-01 | 1979-02-03 | Post Office | Double heteroostructure semiconductor laser |
| JPS54103686A (en) * | 1978-01-18 | 1979-08-15 | Philips Nv | Method of fabricating device by proton impact |
| JPS5555593A (en) * | 1978-10-17 | 1980-04-23 | Nippon Telegr & Teleph Corp <Ntt> | Current narrowed type semiconductor laser device |
| JPS63236383A (ja) * | 1987-03-25 | 1988-10-03 | Hitachi Ltd | 半導体レ−ザ装置 |
-
1975
- 1975-05-23 JP JP6272575A patent/JPS51138181A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5414694A (en) * | 1977-07-01 | 1979-02-03 | Post Office | Double heteroostructure semiconductor laser |
| JPS54103686A (en) * | 1978-01-18 | 1979-08-15 | Philips Nv | Method of fabricating device by proton impact |
| JPS5555593A (en) * | 1978-10-17 | 1980-04-23 | Nippon Telegr & Teleph Corp <Ntt> | Current narrowed type semiconductor laser device |
| JPS63236383A (ja) * | 1987-03-25 | 1988-10-03 | Hitachi Ltd | 半導体レ−ザ装置 |
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