JPS546767A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS546767A
JPS546767A JP7245677A JP7245677A JPS546767A JP S546767 A JPS546767 A JP S546767A JP 7245677 A JP7245677 A JP 7245677A JP 7245677 A JP7245677 A JP 7245677A JP S546767 A JPS546767 A JP S546767A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
strain
irradiating
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7245677A
Other languages
Japanese (ja)
Inventor
Masahiko Nakamae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7245677A priority Critical patent/JPS546767A/en
Publication of JPS546767A publication Critical patent/JPS546767A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain an effective getter effect by irradiating the laser beam through the rear surface of the semiconductor substrate to form the crystal grid strain reaching the substrate surface and thus forming a strain suitably with a necessary density under a clean condition.
COPYRIGHT: (C)1979,JPO&Japio
JP7245677A 1977-06-17 1977-06-17 Manufacture of semiconductor device Pending JPS546767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7245677A JPS546767A (en) 1977-06-17 1977-06-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7245677A JPS546767A (en) 1977-06-17 1977-06-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS546767A true JPS546767A (en) 1979-01-19

Family

ID=13489813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7245677A Pending JPS546767A (en) 1977-06-17 1977-06-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS546767A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5655040A (en) * 1979-10-11 1981-05-15 Matsushita Electric Ind Co Ltd Treatment of semiconductor substrate
JPH0346502U (en) * 1989-09-07 1991-04-30
US5130260A (en) * 1990-07-13 1992-07-14 Mitsubishi Materials Corporation Method of gettering unintentional mobile impurities in silicon wafer by using a damaged layer exposed to the reverse surface thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5655040A (en) * 1979-10-11 1981-05-15 Matsushita Electric Ind Co Ltd Treatment of semiconductor substrate
JPH0346502U (en) * 1989-09-07 1991-04-30
US5130260A (en) * 1990-07-13 1992-07-14 Mitsubishi Materials Corporation Method of gettering unintentional mobile impurities in silicon wafer by using a damaged layer exposed to the reverse surface thereof

Similar Documents

Publication Publication Date Title
JPS53114347A (en) Working method for semiconductor device
JPS546767A (en) Manufacture of semiconductor device
JPS53145564A (en) Production of semiconductor device
JPS5437472A (en) Manufacture of semiconductor
JPS5432283A (en) Semiconductor laser unit
JPS53105964A (en) Manufacture of semiconductor device
JPS5362477A (en) Electron beam drawing device
JPS5214374A (en) Treatment equpment for ion beam
JPS52100982A (en) Semiconductor device
JPS53120291A (en) Manufacture of semiconductor laser
JPS532071A (en) Manufacture of semiconductor device
JPS52117557A (en) Soft x-ray exposure mask and its manufacturing method
JPS5387170A (en) Mounting method and mounting device of semiconductor device
JPS5429968A (en) Manufacture of semiconductor device
JPS52100891A (en) X ray generation method and its device
JPS53105977A (en) Manufacture of semiconductor device
JPS53118993A (en) Manufacture for semiconductor device
JPS53139211A (en) Manufacturing of light alloy blade
JPS535574A (en) Manufacture of semiconductor device
JPS544567A (en) Growing apparatus of ion beam crystal
JPS5367389A (en) Production of semiconductor laser
JPS5428566A (en) Manufacture of semiconductor device
JPS52119184A (en) Electron beam exposing method
JPS52119867A (en) Formation of fine pattern
JPS53121468A (en) Manufacture for semiconductor device