JPS51139280A - Semi-conductor device and method of manufacturing the same - Google Patents

Semi-conductor device and method of manufacturing the same

Info

Publication number
JPS51139280A
JPS51139280A JP50063664A JP6366475A JPS51139280A JP S51139280 A JPS51139280 A JP S51139280A JP 50063664 A JP50063664 A JP 50063664A JP 6366475 A JP6366475 A JP 6366475A JP S51139280 A JPS51139280 A JP S51139280A
Authority
JP
Japan
Prior art keywords
semi
conductor device
manufacturing
same
thyristors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50063664A
Other languages
English (en)
Inventor
Katsuhiro Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50063664A priority Critical patent/JPS51139280A/ja
Publication of JPS51139280A publication Critical patent/JPS51139280A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]

Landscapes

  • Thyristors (AREA)
JP50063664A 1975-05-27 1975-05-27 Semi-conductor device and method of manufacturing the same Pending JPS51139280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50063664A JPS51139280A (en) 1975-05-27 1975-05-27 Semi-conductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50063664A JPS51139280A (en) 1975-05-27 1975-05-27 Semi-conductor device and method of manufacturing the same

Publications (1)

Publication Number Publication Date
JPS51139280A true JPS51139280A (en) 1976-12-01

Family

ID=13235826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50063664A Pending JPS51139280A (en) 1975-05-27 1975-05-27 Semi-conductor device and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JPS51139280A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5453873A (en) * 1977-09-02 1979-04-27 Gen Electric Method of improving characteristics of bidirectional semiconductor switch
JPS54114985A (en) * 1978-02-11 1979-09-07 Semikron Gleichrichterbau Semiconductor
JPS5645073A (en) * 1979-09-21 1981-04-24 Hitachi Ltd Reverse conduction thyrister

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017587A (ja) * 1973-05-04 1975-02-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017587A (ja) * 1973-05-04 1975-02-24

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5453873A (en) * 1977-09-02 1979-04-27 Gen Electric Method of improving characteristics of bidirectional semiconductor switch
JPS54114985A (en) * 1978-02-11 1979-09-07 Semikron Gleichrichterbau Semiconductor
JPS5645073A (en) * 1979-09-21 1981-04-24 Hitachi Ltd Reverse conduction thyrister

Similar Documents

Publication Publication Date Title
NL7507742A (nl) Werkwijze voor ionenimplantatie in een halfgeleider- drager en halfgeleiderinrichting vervaardigd vol- gens deze werkwijze.
JPS523389A (en) Field effect semiconductor device
JPS51139280A (en) Semi-conductor device and method of manufacturing the same
US3733222A (en) Method of removing inversion layers from semiconductor bodies of p-type conductivity
JPS5251955A (en) Optical semiconductor device
AT368321B (de) Halbleiterdiodeneinrichtung, insbesondere halbleiterdiodenzeile, zur erzeugung oder zum empfang von strahlung
JPS51114887A (en) Semiconductor device
JPS5253665A (en) Semiconductor device
JPS5339880A (en) Field effect type semiconductor device and its production
JPS5219978A (en) Manufacture process for a semiconductor device
JPS5250175A (en) Electrostatic induction type thyristor
JPS5372583A (en) Semiconductor device
JPS5318960A (en) Bonding method
JPS5250182A (en) Semiconductor device
JPS51147978A (en) Semiconductor controlled rectifier
JPS52105786A (en) Semiconductor device
JPS5329579B2 (ja)
JPS51118184A (en) Device of finite-indexing workpieces
JPS5246776A (en) Semiconductor device
JPS5427378A (en) Semiconductor integrated circuit device
JPS5273673A (en) Production of semiconductor device
JPS5432084A (en) Semiconductor device
JPS51145287A (en) Semiconductor luminous device
JPS52150984A (en) Semiconductor device
JPS52104072A (en) High voltage semiconductor device