JPS5244574A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5244574A JPS5244574A JP50120960A JP12096075A JPS5244574A JP S5244574 A JPS5244574 A JP S5244574A JP 50120960 A JP50120960 A JP 50120960A JP 12096075 A JP12096075 A JP 12096075A JP S5244574 A JPS5244574 A JP S5244574A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- junction
- type fet
- junction transistor
- junction type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To form a junction transistor and junction type FET on the same substrate thereby making a junction type FET provided with a constant current source or a junction transistor provided with high voltage protection device.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50120960A JPS5244574A (en) | 1975-10-06 | 1975-10-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50120960A JPS5244574A (en) | 1975-10-06 | 1975-10-06 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5244574A true JPS5244574A (en) | 1977-04-07 |
Family
ID=14799243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50120960A Pending JPS5244574A (en) | 1975-10-06 | 1975-10-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5244574A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS568873A (en) * | 1979-07-04 | 1981-01-29 | Pioneer Electronic Corp | Bipolar transistor |
| JPS5753975A (en) * | 1980-08-04 | 1982-03-31 | Siemens Ag | |
| JPS57186361A (en) * | 1981-05-12 | 1982-11-16 | Fuji Electric Co Ltd | Transistor having high-dielectric strength |
| JPS5837957A (en) * | 1981-08-29 | 1983-03-05 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| US4729008A (en) * | 1982-12-08 | 1988-03-01 | Harris Corporation | High voltage IC bipolar transistors operable to BVCBO and method of fabrication |
| EP2058854A3 (en) * | 2007-11-07 | 2012-03-21 | Acreo AB | A semiconductor device |
-
1975
- 1975-10-06 JP JP50120960A patent/JPS5244574A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS568873A (en) * | 1979-07-04 | 1981-01-29 | Pioneer Electronic Corp | Bipolar transistor |
| JPS5753975A (en) * | 1980-08-04 | 1982-03-31 | Siemens Ag | |
| JPS57186361A (en) * | 1981-05-12 | 1982-11-16 | Fuji Electric Co Ltd | Transistor having high-dielectric strength |
| JPS5837957A (en) * | 1981-08-29 | 1983-03-05 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| US4729008A (en) * | 1982-12-08 | 1988-03-01 | Harris Corporation | High voltage IC bipolar transistors operable to BVCBO and method of fabrication |
| EP2058854A3 (en) * | 2007-11-07 | 2012-03-21 | Acreo AB | A semiconductor device |
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