JPS51140889A - A vapor phase growth apparatus - Google Patents

A vapor phase growth apparatus

Info

Publication number
JPS51140889A
JPS51140889A JP6420175A JP6420175A JPS51140889A JP S51140889 A JPS51140889 A JP S51140889A JP 6420175 A JP6420175 A JP 6420175A JP 6420175 A JP6420175 A JP 6420175A JP S51140889 A JPS51140889 A JP S51140889A
Authority
JP
Japan
Prior art keywords
vapor phase
phase growth
growth apparatus
grown
growth film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6420175A
Other languages
English (en)
Inventor
Masakuni Akiba
Masataka Nomura
Hiroo Tochikubo
Yushi Kase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6420175A priority Critical patent/JPS51140889A/ja
Publication of JPS51140889A publication Critical patent/JPS51140889A/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502Flow conditions in reaction chamber
    • C23C16/45508Radial flow
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP6420175A 1975-05-30 1975-05-30 A vapor phase growth apparatus Pending JPS51140889A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6420175A JPS51140889A (en) 1975-05-30 1975-05-30 A vapor phase growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6420175A JPS51140889A (en) 1975-05-30 1975-05-30 A vapor phase growth apparatus

Publications (1)

Publication Number Publication Date
JPS51140889A true JPS51140889A (en) 1976-12-04

Family

ID=13251207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6420175A Pending JPS51140889A (en) 1975-05-30 1975-05-30 A vapor phase growth apparatus

Country Status (1)

Country Link
JP (1) JPS51140889A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009517541A (ja) * 2005-11-25 2009-04-30 アイクストロン、アーゲー ガス入口部品を有するcvd反応装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046273A (ja) * 1973-08-30 1975-04-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046273A (ja) * 1973-08-30 1975-04-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009517541A (ja) * 2005-11-25 2009-04-30 アイクストロン、アーゲー ガス入口部品を有するcvd反応装置

Similar Documents

Publication Publication Date Title
JPS51140889A (en) A vapor phase growth apparatus
JPS5224850A (en) Film formation for plant cultivation
JPS51139774A (en) Liquid phase growing device
JPS5272698A (en) Wrapping method
JPS51131481A (en) A vacuum vaporizing apparatus
JPS5280777A (en) Vapor growth process
JPS51140561A (en) Liquid phase epitaxial growing method
JPS51148594A (en) Thermo-shrink packaging method with improved seal-brakability
JPS52149274A (en) Process for forming vacuum evaporation film
JPS52114270A (en) Vapor growing apparatus
JPS51115288A (en) Method of preparing compound film
JPS5264073A (en) Holder apparatus
JPS51146176A (en) Basic plate for diode device
JPS5219184A (en) Vapor source
JPS52144383A (en) Apparatus for feeding material to be vacuum evaporated
JPS52124483A (en) Gas phase growth regulation apparatus
JPS51134949A (en) High-frequency heating device
JPS5231666A (en) Source container for capor phase growing
JPS51121487A (en) Apparatus for producing a thin film
JPS52140083A (en) Sheet material piling apparatus
JPS5261958A (en) Method and device for liquid phase crystal crowth
AU477283B2 (en) Machine for placing substantially flat, openthroated elements on rods
JPS5287771A (en) Material feeding device
JPS5245488A (en) Apparatus for conveying fruit
JPS5272569A (en) Epitaxial growth device