JPS51146174A - Diode device fabrication method - Google Patents

Diode device fabrication method

Info

Publication number
JPS51146174A
JPS51146174A JP50070479A JP7047975A JPS51146174A JP S51146174 A JPS51146174 A JP S51146174A JP 50070479 A JP50070479 A JP 50070479A JP 7047975 A JP7047975 A JP 7047975A JP S51146174 A JPS51146174 A JP S51146174A
Authority
JP
Japan
Prior art keywords
fabrication method
diode device
device fabrication
daubed
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50070479A
Other languages
English (en)
Other versions
JPS5734646B2 (ja
Inventor
Yoichi Akasaka
Kazuo Horie
Katsuhiro Tsukamoto
Hiroichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50070479A priority Critical patent/JPS51146174A/ja
Publication of JPS51146174A publication Critical patent/JPS51146174A/ja
Publication of JPS5734646B2 publication Critical patent/JPS5734646B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP50070479A 1975-06-11 1975-06-11 Diode device fabrication method Granted JPS51146174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50070479A JPS51146174A (en) 1975-06-11 1975-06-11 Diode device fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50070479A JPS51146174A (en) 1975-06-11 1975-06-11 Diode device fabrication method

Publications (2)

Publication Number Publication Date
JPS51146174A true JPS51146174A (en) 1976-12-15
JPS5734646B2 JPS5734646B2 (ja) 1982-07-24

Family

ID=13432687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50070479A Granted JPS51146174A (en) 1975-06-11 1975-06-11 Diode device fabrication method

Country Status (1)

Country Link
JP (1) JPS51146174A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154267A (ja) * 1982-03-08 1983-09-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション バイポ−ラ・トランジスタの製造方法
JPS63226920A (ja) * 1987-03-16 1988-09-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
US6342714B1 (en) 1998-02-16 2002-01-29 Nec Corporation HSG lower electrode structure having a neck supported by a silicon layer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737942A (en) * 1980-08-13 1982-03-02 Toshiba Corp Optical signal relay system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504976A (ja) * 1973-05-16 1975-01-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504976A (ja) * 1973-05-16 1975-01-20

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154267A (ja) * 1982-03-08 1983-09-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション バイポ−ラ・トランジスタの製造方法
JPS63226920A (ja) * 1987-03-16 1988-09-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
US6342714B1 (en) 1998-02-16 2002-01-29 Nec Corporation HSG lower electrode structure having a neck supported by a silicon layer

Also Published As

Publication number Publication date
JPS5734646B2 (ja) 1982-07-24

Similar Documents

Publication Publication Date Title
JPS51146174A (en) Diode device fabrication method
JPS5253658A (en) Method of introducing impurity into semiconductor
JPS5240059A (en) Process for production of semiconductor device
JPS5226191A (en) Package of photo-semiconductor element
JPS5230167A (en) Method for production of semiconductor device
JPS51148365A (en) Electron beam exposure method
JPS5235980A (en) Manufacturing method of semiconductor device
JPS5435682A (en) Manufacture of field effect transistor
JPS51130176A (en) Semiconductor device process
JPS534477A (en) Production of semiconductor device
JPS5348458A (en) Production of semiconductor device
JPS525270A (en) Photo-mask
JPS535578A (en) Manufacture of semiconductor device
JPS5217765A (en) Method to diffuse arsenic in a silicone wafer
JPS5211867A (en) Manufacturing method of a semiconductor device
JPS51137390A (en) Thin film current magnetic effect element manufacturing method
JPS51144580A (en) Manufacturing method of semiconductor device
JPS5218176A (en) Production method of semiconductor device
JPS51113469A (en) Manufacturing method of semiconductor device
JPS51131277A (en) Semi-conductor unit manufacturing process
JPS5210680A (en) Method of manufacturing photo-mask for photo etching
JPS5245884A (en) Process for production of semiconductor device
JPS524590A (en) Accelerated photo-oxidation of olefinic polymer
JPS53121468A (en) Manufacture for semiconductor device
JPS5372573A (en) Mask alignment device