JPS51147268A - Manufacturing process of depression type field effect semiconductor de vice by ion-implantation - Google Patents

Manufacturing process of depression type field effect semiconductor de vice by ion-implantation

Info

Publication number
JPS51147268A
JPS51147268A JP50070809A JP7080975A JPS51147268A JP S51147268 A JPS51147268 A JP S51147268A JP 50070809 A JP50070809 A JP 50070809A JP 7080975 A JP7080975 A JP 7080975A JP S51147268 A JPS51147268 A JP S51147268A
Authority
JP
Japan
Prior art keywords
implantation
ion
vice
manufacturing process
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50070809A
Other languages
Japanese (ja)
Inventor
Katsuhiko Ito
Takashi Tsuchimoto
Kazuo Yudasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50070809A priority Critical patent/JPS51147268A/en
Priority to DE19762626362 priority patent/DE2626362A1/en
Priority to NL7606422A priority patent/NL7606422A/en
Publication of JPS51147268A publication Critical patent/JPS51147268A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Abstract

PURPOSE: To obtain, in MOST, reduced leakage current between the source and the drain by making the device a depression-type by ion-implantation.
COPYRIGHT: (C)1976,JPO&Japio
JP50070809A 1975-06-13 1975-06-13 Manufacturing process of depression type field effect semiconductor de vice by ion-implantation Pending JPS51147268A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50070809A JPS51147268A (en) 1975-06-13 1975-06-13 Manufacturing process of depression type field effect semiconductor de vice by ion-implantation
DE19762626362 DE2626362A1 (en) 1975-06-13 1976-06-11 Depletion-type MOS field effect transistor mfr. - with implantation of arsenic or antimony ions
NL7606422A NL7606422A (en) 1975-06-13 1976-06-14 PROCESS FOR THE MANUFACTURE OF MOS FIELD DEFECT SEMICONDUCTORS OF THE DEPLETION TYPE.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50070809A JPS51147268A (en) 1975-06-13 1975-06-13 Manufacturing process of depression type field effect semiconductor de vice by ion-implantation

Publications (1)

Publication Number Publication Date
JPS51147268A true JPS51147268A (en) 1976-12-17

Family

ID=13442254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50070809A Pending JPS51147268A (en) 1975-06-13 1975-06-13 Manufacturing process of depression type field effect semiconductor de vice by ion-implantation

Country Status (3)

Country Link
JP (1) JPS51147268A (en)
DE (1) DE2626362A1 (en)
NL (1) NL7606422A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833870A (en) * 1981-08-24 1983-02-28 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
NL7606422A (en) 1976-12-15
DE2626362A1 (en) 1977-01-13

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