JPS53129980A - Production of mos semiconductor device - Google Patents

Production of mos semiconductor device

Info

Publication number
JPS53129980A
JPS53129980A JP4446177A JP4446177A JPS53129980A JP S53129980 A JPS53129980 A JP S53129980A JP 4446177 A JP4446177 A JP 4446177A JP 4446177 A JP4446177 A JP 4446177A JP S53129980 A JPS53129980 A JP S53129980A
Authority
JP
Japan
Prior art keywords
mos semiconductor
production
semiconductor device
diffusion
elimiante
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4446177A
Other languages
Japanese (ja)
Inventor
Nozomi Horino
Yoshio Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4446177A priority Critical patent/JPS53129980A/en
Publication of JPS53129980A publication Critical patent/JPS53129980A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To elimiante the variations in the threshold voltages of MOS semiconductor devices of diffusion self-alignment structure, avert the increase in contact area and improve the scale of integration by combining a diffusion method and ion implantation method thereby eliminating the defects of both.
COPYRIGHT: (C)1978,JPO&Japio
JP4446177A 1977-04-20 1977-04-20 Production of mos semiconductor device Pending JPS53129980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4446177A JPS53129980A (en) 1977-04-20 1977-04-20 Production of mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4446177A JPS53129980A (en) 1977-04-20 1977-04-20 Production of mos semiconductor device

Publications (1)

Publication Number Publication Date
JPS53129980A true JPS53129980A (en) 1978-11-13

Family

ID=12692123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4446177A Pending JPS53129980A (en) 1977-04-20 1977-04-20 Production of mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS53129980A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418283A (en) * 1977-07-12 1979-02-10 Agency Of Ind Science & Technol Manufacture of double diffusion type insulating gate fet
JPS55132073A (en) * 1979-03-29 1980-10-14 Siemens Ag Method of fabricating mis field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418283A (en) * 1977-07-12 1979-02-10 Agency Of Ind Science & Technol Manufacture of double diffusion type insulating gate fet
JPS55132073A (en) * 1979-03-29 1980-10-14 Siemens Ag Method of fabricating mis field effect transistor

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