JPS51147929A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS51147929A
JPS51147929A JP50071765A JP7176575A JPS51147929A JP S51147929 A JPS51147929 A JP S51147929A JP 50071765 A JP50071765 A JP 50071765A JP 7176575 A JP7176575 A JP 7176575A JP S51147929 A JPS51147929 A JP S51147929A
Authority
JP
Japan
Prior art keywords
semiconductor memory
metal wires
memory
electrodes
preventing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50071765A
Other languages
Japanese (ja)
Inventor
Kiyoto Iida
Tadashi Kuragami
Zensuke Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50071765A priority Critical patent/JPS51147929A/en
Publication of JPS51147929A publication Critical patent/JPS51147929A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To obtain a large capacity, low cost memory by disposing single metal wires for the electrodes of memory cells and by preventing the contact of the disposed metal wires with a substrate semiconductor or other wiring metals.
JP50071765A 1975-06-13 1975-06-13 Semiconductor memory Pending JPS51147929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50071765A JPS51147929A (en) 1975-06-13 1975-06-13 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071765A JPS51147929A (en) 1975-06-13 1975-06-13 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS51147929A true JPS51147929A (en) 1976-12-18

Family

ID=13469953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071765A Pending JPS51147929A (en) 1975-06-13 1975-06-13 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS51147929A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157239A (en) * 1979-05-25 1980-12-06 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157239A (en) * 1979-05-25 1980-12-06 Nec Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS5279660A (en) Power semiconductor circuit element with flat cell construction
JPS5279679A (en) Semiconductor memory device
JPS52153630A (en) Semiconductor memory device
JPS528785A (en) Semiconductor device electrode structure
JPS51147929A (en) Semiconductor memory
JPS54524A (en) Semiconductor memory unit
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS5412286A (en) Semiconductor device
JPS5751928B2 (en)
JPS53132281A (en) Semiconductor memory device
JPS5362471A (en) Semiconductor device
JPS53140967A (en) Production of electrodes of semiconductor device
JPS5228262A (en) Process for assembling semiconductor device
JPS51150270A (en) Flat type multiple digit indicator
JPS5226197A (en) Display unit
JPS5366369A (en) Semiconductor device
JPS5269537A (en) Semiconductor memory
JPS5268385A (en) Semiconductor memory
JPS5211772A (en) Semiconductor device
JPS5215272A (en) Semiconductor device
JPS51142932A (en) Semiconductor memory devices
JPS531428A (en) Semiconductor memory
JPS5333A (en) Semiconductor memory circuit
JPS52151565A (en) Semiconductor device and its production
JPS5257788A (en) Semiconductor device