JPS51148387A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51148387A
JPS51148387A JP50072008A JP7200875A JPS51148387A JP S51148387 A JPS51148387 A JP S51148387A JP 50072008 A JP50072008 A JP 50072008A JP 7200875 A JP7200875 A JP 7200875A JP S51148387 A JPS51148387 A JP S51148387A
Authority
JP
Japan
Prior art keywords
semiconductor device
become
wel
mis
constitute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50072008A
Other languages
Japanese (ja)
Other versions
JPS596065B2 (en
Inventor
Koichi Mikome
Shiro Araya
Mitsumasa Ashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50072008A priority Critical patent/JPS596065B2/en
Publication of JPS51148387A publication Critical patent/JPS51148387A/en
Publication of JPS596065B2 publication Critical patent/JPS596065B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To constitute so that the thyristor construction part in C-MIS might not become ON even when the voltage of the output terminal become lower than that of P<-> wel.
JP50072008A 1975-06-16 1975-06-16 Hand tie souchi Expired JPS596065B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50072008A JPS596065B2 (en) 1975-06-16 1975-06-16 Hand tie souchi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50072008A JPS596065B2 (en) 1975-06-16 1975-06-16 Hand tie souchi

Publications (2)

Publication Number Publication Date
JPS51148387A true JPS51148387A (en) 1976-12-20
JPS596065B2 JPS596065B2 (en) 1984-02-08

Family

ID=13476944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50072008A Expired JPS596065B2 (en) 1975-06-16 1975-06-16 Hand tie souchi

Country Status (1)

Country Link
JP (1) JPS596065B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211884A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS60154554A (en) * 1984-01-24 1985-08-14 Nec Corp Complementary type insulated gate field effect semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191681A (en) * 1975-01-22 1976-08-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191681A (en) * 1975-01-22 1976-08-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211884A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS60154554A (en) * 1984-01-24 1985-08-14 Nec Corp Complementary type insulated gate field effect semiconductor device

Also Published As

Publication number Publication date
JPS596065B2 (en) 1984-02-08

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