JPS51150984A - Dielectric isolation method - Google Patents

Dielectric isolation method

Info

Publication number
JPS51150984A
JPS51150984A JP50075148A JP7514875A JPS51150984A JP S51150984 A JPS51150984 A JP S51150984A JP 50075148 A JP50075148 A JP 50075148A JP 7514875 A JP7514875 A JP 7514875A JP S51150984 A JPS51150984 A JP S51150984A
Authority
JP
Japan
Prior art keywords
dielectric isolation
shape
isolation method
realm
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50075148A
Other languages
Japanese (ja)
Other versions
JPS5742217B2 (en
Inventor
Tatsunori Nakajima
Kosei Kajiwara
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50075148A priority Critical patent/JPS51150984A/en
Publication of JPS51150984A publication Critical patent/JPS51150984A/en
Publication of JPS5742217B2 publication Critical patent/JPS5742217B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: How to perform dielectric isolation of high degree of reliability by providing a n shape realm in a P shape substrate and forming a n shape island realm on the upper part of the P shape substrate so that the rest of the sepper part of the P shape substrate can have high porosity.
COPYRIGHT: (C)1976,JPO&Japio
JP50075148A 1975-06-19 1975-06-19 Dielectric isolation method Granted JPS51150984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50075148A JPS51150984A (en) 1975-06-19 1975-06-19 Dielectric isolation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50075148A JPS51150984A (en) 1975-06-19 1975-06-19 Dielectric isolation method

Publications (2)

Publication Number Publication Date
JPS51150984A true JPS51150984A (en) 1976-12-24
JPS5742217B2 JPS5742217B2 (en) 1982-09-07

Family

ID=13567815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50075148A Granted JPS51150984A (en) 1975-06-19 1975-06-19 Dielectric isolation method

Country Status (1)

Country Link
JP (1) JPS51150984A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172273A (en) * 1983-03-18 1984-09-28 Toko Inc Manufacture of junction type field-effect transistor
JPS59175746A (en) * 1983-03-26 1984-10-04 Toko Inc Manufacture of semiconductor integrated circuit device
EP1745515A4 (en) * 2004-04-22 2009-04-01 Ibm ADJUSTABLE SEMICONDUCTOR DEVICE

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172273A (en) * 1983-03-18 1984-09-28 Toko Inc Manufacture of junction type field-effect transistor
JPS59175746A (en) * 1983-03-26 1984-10-04 Toko Inc Manufacture of semiconductor integrated circuit device
EP1745515A4 (en) * 2004-04-22 2009-04-01 Ibm ADJUSTABLE SEMICONDUCTOR DEVICE
US7709930B2 (en) 2004-04-22 2010-05-04 International Business Machines Corporation Tuneable semiconductor device with discontinuous portions in the sub-collector

Also Published As

Publication number Publication date
JPS5742217B2 (en) 1982-09-07

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