JPS5368165A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5368165A JPS5368165A JP14427576A JP14427576A JPS5368165A JP S5368165 A JPS5368165 A JP S5368165A JP 14427576 A JP14427576 A JP 14427576A JP 14427576 A JP14427576 A JP 14427576A JP S5368165 A JPS5368165 A JP S5368165A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- layer
- concentration
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To produce a device of good high frequency characteristics and high reliability by laminating poly-Si of low concentration and high concentration on substrate surface, annealing said layer and forming the layer to a desired shape.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14427576A JPS5368165A (en) | 1976-11-30 | 1976-11-30 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14427576A JPS5368165A (en) | 1976-11-30 | 1976-11-30 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5368165A true JPS5368165A (en) | 1978-06-17 |
Family
ID=15358291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14427576A Pending JPS5368165A (en) | 1976-11-30 | 1976-11-30 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5368165A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591176A (en) * | 1978-12-29 | 1980-07-10 | Ibm | Method of fabricating semiconductor device |
| JPS61222125A (en) * | 1985-03-27 | 1986-10-02 | Rohm Co Ltd | Manufacture of semiconductor device |
| JP2016514359A (en) * | 2012-11-05 | 2016-05-19 | ダイナロイ・エルエルシー | Solution formulation and method for forming a substrate comprising an arsenic dopant |
-
1976
- 1976-11-30 JP JP14427576A patent/JPS5368165A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591176A (en) * | 1978-12-29 | 1980-07-10 | Ibm | Method of fabricating semiconductor device |
| JPS61222125A (en) * | 1985-03-27 | 1986-10-02 | Rohm Co Ltd | Manufacture of semiconductor device |
| JP2016514359A (en) * | 2012-11-05 | 2016-05-19 | ダイナロイ・エルエルシー | Solution formulation and method for forming a substrate comprising an arsenic dopant |
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