JPS5117663A - Handotaikibanyo supineruketsusho - Google Patents

Handotaikibanyo supineruketsusho

Info

Publication number
JPS5117663A
JPS5117663A JP49089280A JP8928074A JPS5117663A JP S5117663 A JPS5117663 A JP S5117663A JP 49089280 A JP49089280 A JP 49089280A JP 8928074 A JP8928074 A JP 8928074A JP S5117663 A JPS5117663 A JP S5117663A
Authority
JP
Japan
Prior art keywords
supineruketsusho
handotaikibanyo
handotaikibanyo supineruketsusho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49089280A
Other languages
English (en)
Other versions
JPS5339306B2 (ja
Inventor
Junichi Nishizawa
Mitsuhiro Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Tohoku Kinzoku Kogyo KK
Original Assignee
Tohoku Metal Industries Ltd
Tohoku Kinzoku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Metal Industries Ltd, Tohoku Kinzoku Kogyo KK filed Critical Tohoku Metal Industries Ltd
Priority to JP49089280A priority Critical patent/JPS5117663A/ja
Priority to US05/600,007 priority patent/US3990902A/en
Priority to DE2534187A priority patent/DE2534187C3/de
Publication of JPS5117663A publication Critical patent/JPS5117663A/ja
Publication of JPS5339306B2 publication Critical patent/JPS5339306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP49089280A 1974-08-02 1974-08-02 Handotaikibanyo supineruketsusho Granted JPS5117663A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP49089280A JPS5117663A (en) 1974-08-02 1974-08-02 Handotaikibanyo supineruketsusho
US05/600,007 US3990902A (en) 1974-08-02 1975-07-29 Magnesium-titanate-comprising spinel single crystal substrate for semiconductor devices
DE2534187A DE2534187C3 (de) 1974-08-02 1975-07-31 Substrat aus einem einkristallinen Spinell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49089280A JPS5117663A (en) 1974-08-02 1974-08-02 Handotaikibanyo supineruketsusho

Publications (2)

Publication Number Publication Date
JPS5117663A true JPS5117663A (en) 1976-02-12
JPS5339306B2 JPS5339306B2 (ja) 1978-10-20

Family

ID=13966296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49089280A Granted JPS5117663A (en) 1974-08-02 1974-08-02 Handotaikibanyo supineruketsusho

Country Status (3)

Country Link
US (1) US3990902A (ja)
JP (1) JPS5117663A (ja)
DE (1) DE2534187C3 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005521627A (ja) * 2002-04-03 2005-07-21 サンーゴバン セラミックス アンド プラスティクス，インコーポレイティド スピネル基板及び該スピネル基板上でのｉｉｉ−ｖ材料のへテロエピタキシャル成長

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532021B2 (ja) * 1974-10-26 1980-08-22
JPS605545B2 (ja) * 1980-03-19 1985-02-12 日本碍子株式会社 低膨脹セラミックスおよびその製法
US5024980A (en) * 1987-05-15 1991-06-18 Alpha Industries Ceramic dielectric alloy
US4980246A (en) * 1987-05-15 1990-12-25 Alpha Industries Dense ceramic alloys and process of making same
US4942146A (en) * 1987-05-15 1990-07-17 Alpha Industries Dense ceramic alloys and process of making same
JPH0695554B2 (ja) * 1987-10-12 1994-11-24 工業技術院長 単結晶マグネシアスピネル膜の形成方法
US5413973A (en) * 1989-06-08 1995-05-09 The United States Of America As Represented By The United States Department Of Energy Method for thermal processing alumina-enriched spinel single crystals
DE4121798A1 (de) * 1991-07-02 1993-01-14 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltene zusammensetzung
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US20060243197A1 (en) * 2004-05-14 2006-11-02 Eiichi Hanamura Transition metal doped spinel type mgal2o4 fluorescent material and laser apparatus using, and method of making, such fluorescent material
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2436840A (en) * 1948-03-02 Table i
US2691088A (en) * 1949-11-28 1954-10-05 Ungewiss Alfred Ohmic resistance
US3531308A (en) * 1967-10-09 1970-09-29 Corning Glass Works Transparent spinel body
US3713877A (en) * 1969-02-10 1973-01-30 H Kirchner Method of strengthening ceramic bodies and strengthened ceramic bodies produced thereby

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005521627A (ja) * 2002-04-03 2005-07-21 サンーゴバン セラミックス アンド プラスティクス，インコーポレイティド スピネル基板及び該スピネル基板上でのｉｉｉ−ｖ材料のへテロエピタキシャル成長

Also Published As

Publication number Publication date
JPS5339306B2 (ja) 1978-10-20
DE2534187C3 (de) 1980-05-29
US3990902A (en) 1976-11-09
DE2534187A1 (de) 1976-02-12
DE2534187B2 (de) 1979-08-30

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