JPS5146076A - Handotaisochinoseizoho - Google Patents

Handotaisochinoseizoho

Info

Publication number
JPS5146076A
JPS5146076A JP50101658A JP10165875A JPS5146076A JP S5146076 A JPS5146076 A JP S5146076A JP 50101658 A JP50101658 A JP 50101658A JP 10165875 A JP10165875 A JP 10165875A JP S5146076 A JPS5146076 A JP S5146076A
Authority
JP
Japan
Prior art keywords
handotaisochinoseizoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50101658A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5227033B2 (fr
Inventor
Honzatsuku Samyueru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS5146076A publication Critical patent/JPS5146076A/ja
Publication of JPS5227033B2 publication Critical patent/JPS5227033B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Weting (AREA)
  • Bipolar Transistors (AREA)
JP50101658A 1974-08-21 1975-08-20 Handotaisochinoseizoho Granted JPS5146076A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49928874A 1974-08-21 1974-08-21

Publications (2)

Publication Number Publication Date
JPS5146076A true JPS5146076A (en) 1976-04-20
JPS5227033B2 JPS5227033B2 (fr) 1977-07-18

Family

ID=23984661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50101658A Granted JPS5146076A (en) 1974-08-21 1975-08-20 Handotaisochinoseizoho

Country Status (7)

Country Link
JP (1) JPS5146076A (fr)
BE (1) BE832633A (fr)
CA (1) CA1038969A (fr)
DE (1) DE2536108A1 (fr)
FR (1) FR2282722A1 (fr)
GB (1) GB1471116A (fr)
IT (1) IT1040004B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895553A (ja) * 1981-12-01 1983-06-07 Nippon Shokubai Kagaku Kogyo Co Ltd 耐熱衝撃性の改良されたハニカム触媒の製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7607298A (nl) * 1976-07-02 1978-01-04 Philips Nv Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze.
FR2410366A1 (fr) * 1977-11-29 1979-06-22 Radiotechnique Compelec Transistor de type mesa et procede de realisation de ce transistor
DE3422051C2 (de) * 1984-06-14 1986-06-26 Brown, Boveri & Cie Ag, 6800 Mannheim Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements
GB2176338A (en) * 1985-06-06 1986-12-17 Marconi Electronic Devices Edge contouring in a semiconductor device
JPH0777240B2 (ja) * 1989-01-20 1995-08-16 富士通株式会社 半導体装置の製造方法
JPH03129854A (ja) * 1989-10-16 1991-06-03 Toshiba Corp 半導体装置の製造方法
DE19536438A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895553A (ja) * 1981-12-01 1983-06-07 Nippon Shokubai Kagaku Kogyo Co Ltd 耐熱衝撃性の改良されたハニカム触媒の製造方法

Also Published As

Publication number Publication date
GB1471116A (en) 1977-04-21
DE2536108A1 (de) 1976-03-11
JPS5227033B2 (fr) 1977-07-18
FR2282722A1 (fr) 1976-03-19
CA1038969A (fr) 1978-09-19
IT1040004B (it) 1979-12-20
BE832633A (fr) 1975-12-16

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