JPS5189817A - - Google Patents

Info

Publication number
JPS5189817A
JPS5189817A JP50152950A JP15295075A JPS5189817A JP S5189817 A JPS5189817 A JP S5189817A JP 50152950 A JP50152950 A JP 50152950A JP 15295075 A JP15295075 A JP 15295075A JP S5189817 A JPS5189817 A JP S5189817A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50152950A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5189817A publication Critical patent/JPS5189817A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
JP50152950A 1974-12-26 1975-12-23 Pending JPS5189817A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53669274A 1974-12-26 1974-12-26

Publications (1)

Publication Number Publication Date
JPS5189817A true JPS5189817A (fr) 1976-08-06

Family

ID=24139526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50152950A Pending JPS5189817A (fr) 1974-12-26 1975-12-23

Country Status (4)

Country Link
JP (1) JPS5189817A (fr)
BE (1) BE837009A (fr)
DE (1) DE2558387A1 (fr)
GB (1) GB1532649A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012515699A (ja) * 2009-01-22 2012-07-12 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング モノシラン工程を使用した多結晶ケイ素生成用反応基

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045600B1 (fr) * 1980-07-28 1984-10-10 Monsanto Company Méthode pour produire du silicium de qualité semiconductrice
GB2179930A (en) * 1985-09-06 1987-03-18 Philips Electronic Associated A method of depositing an epitaxial silicon layer
DE10107255C1 (de) 2001-02-16 2002-06-20 Babcock Bsh Gmbh Furniermessermaschine
DE102006037020A1 (de) * 2006-08-08 2008-02-14 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von hochreinem polykristallinem Silicium mit reduziertem Dotierstoffgehalt
CN101624724B (zh) * 2008-08-22 2012-07-25 江西赛维Ldk光伏硅科技有限公司 多根多晶硅棒的取棒方法及其取棒装置和取棒装置组合件
DE102009043950B4 (de) 2009-09-04 2012-02-02 G+R Technology Group Ag Reaktor zur Herstellung von polykristallinem Silizium
EP2423352A1 (fr) * 2010-08-24 2012-02-29 Centesil S.L. Bouclier thermique pour les réacteurs de production de silicium
DE102013200660A1 (de) 2013-01-17 2014-07-17 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
JP7022874B1 (ja) * 2020-11-27 2022-02-18 株式会社トクヤマ 多結晶シリコンロッド、多結晶シリコンロッドの製造方法および多結晶シリコンの熱処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012515699A (ja) * 2009-01-22 2012-07-12 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング モノシラン工程を使用した多結晶ケイ素生成用反応基

Also Published As

Publication number Publication date
GB1532649A (en) 1978-11-15
BE837009A (fr) 1976-06-23
DE2558387A1 (de) 1976-07-08

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