JPS5210085A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5210085A JPS5210085A JP50085809A JP8580975A JPS5210085A JP S5210085 A JPS5210085 A JP S5210085A JP 50085809 A JP50085809 A JP 50085809A JP 8580975 A JP8580975 A JP 8580975A JP S5210085 A JPS5210085 A JP S5210085A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- thyristor
- improving
- increase
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE:To increase an amount of dv/dt of a thyristor, by improving an amplifier gate portion of a large power thyristor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50085809A JPS5210085A (en) | 1975-07-15 | 1975-07-15 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50085809A JPS5210085A (en) | 1975-07-15 | 1975-07-15 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5210085A true JPS5210085A (en) | 1977-01-26 |
Family
ID=13869186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50085809A Pending JPS5210085A (en) | 1975-07-15 | 1975-07-15 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5210085A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56160066A (en) * | 1980-05-15 | 1981-12-09 | Meidensha Electric Mfg Co Ltd | Gate turn-off thyristor |
| JPS5797670A (en) * | 1980-12-10 | 1982-06-17 | Mitsubishi Electric Corp | Gate turn-off thyristor |
| US4529998A (en) * | 1977-12-14 | 1985-07-16 | Eaton Corporation | Amplified gate thyristor with non-latching amplified control transistors across base layers |
| JPS61124547A (en) * | 1984-11-22 | 1986-06-12 | Yoshida Kogyo Kk <Ykk> | Aluminum or aluminum alloy joinery materials with improved bending workability |
| US5861639A (en) * | 1994-11-25 | 1999-01-19 | Sgs-Thomson Microelectronics S.A. | Breakover-triggered dipole component having a controlled sensitivity |
-
1975
- 1975-07-15 JP JP50085809A patent/JPS5210085A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4529998A (en) * | 1977-12-14 | 1985-07-16 | Eaton Corporation | Amplified gate thyristor with non-latching amplified control transistors across base layers |
| JPS56160066A (en) * | 1980-05-15 | 1981-12-09 | Meidensha Electric Mfg Co Ltd | Gate turn-off thyristor |
| JPS5797670A (en) * | 1980-12-10 | 1982-06-17 | Mitsubishi Electric Corp | Gate turn-off thyristor |
| JPS61124547A (en) * | 1984-11-22 | 1986-06-12 | Yoshida Kogyo Kk <Ykk> | Aluminum or aluminum alloy joinery materials with improved bending workability |
| US5861639A (en) * | 1994-11-25 | 1999-01-19 | Sgs-Thomson Microelectronics S.A. | Breakover-triggered dipole component having a controlled sensitivity |
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