JPS5210085A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5210085A
JPS5210085A JP50085809A JP8580975A JPS5210085A JP S5210085 A JPS5210085 A JP S5210085A JP 50085809 A JP50085809 A JP 50085809A JP 8580975 A JP8580975 A JP 8580975A JP S5210085 A JPS5210085 A JP S5210085A
Authority
JP
Japan
Prior art keywords
semiconductor device
thyristor
improving
increase
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50085809A
Other languages
English (en)
Inventor
Junichi Koizumi
Takahiro Nagano
Isamu Sanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50085809A priority Critical patent/JPS5210085A/ja
Publication of JPS5210085A publication Critical patent/JPS5210085A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Thyristors (AREA)
JP50085809A 1975-07-15 1975-07-15 Semiconductor device Pending JPS5210085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50085809A JPS5210085A (en) 1975-07-15 1975-07-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50085809A JPS5210085A (en) 1975-07-15 1975-07-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5210085A true JPS5210085A (en) 1977-01-26

Family

ID=13869186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50085809A Pending JPS5210085A (en) 1975-07-15 1975-07-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5210085A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160066A (en) * 1980-05-15 1981-12-09 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
JPS5797670A (en) * 1980-12-10 1982-06-17 Mitsubishi Electric Corp Gate turn-off thyristor
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
JPS61124547A (ja) * 1984-11-22 1986-06-12 Yoshida Kogyo Kk <Ykk> 曲げ加工性を改良したアルミニウムまたはアルミニウム合金建具材
US5861639A (en) * 1994-11-25 1999-01-19 Sgs-Thomson Microelectronics S.A. Breakover-triggered dipole component having a controlled sensitivity

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
JPS56160066A (en) * 1980-05-15 1981-12-09 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
JPS5797670A (en) * 1980-12-10 1982-06-17 Mitsubishi Electric Corp Gate turn-off thyristor
JPS61124547A (ja) * 1984-11-22 1986-06-12 Yoshida Kogyo Kk <Ykk> 曲げ加工性を改良したアルミニウムまたはアルミニウム合金建具材
US5861639A (en) * 1994-11-25 1999-01-19 Sgs-Thomson Microelectronics S.A. Breakover-triggered dipole component having a controlled sensitivity

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