JPS5210596A - Insulated grain boundary type piezo-electric substance of polycrystall ine ceramic semiconductor - Google Patents

Insulated grain boundary type piezo-electric substance of polycrystall ine ceramic semiconductor

Info

Publication number
JPS5210596A
JPS5210596A JP50086904A JP8690475A JPS5210596A JP S5210596 A JPS5210596 A JP S5210596A JP 50086904 A JP50086904 A JP 50086904A JP 8690475 A JP8690475 A JP 8690475A JP S5210596 A JPS5210596 A JP S5210596A
Authority
JP
Japan
Prior art keywords
grain boundary
boundary type
ceramic semiconductor
type piezo
electric substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50086904A
Other languages
Japanese (ja)
Other versions
JPS6128208B2 (en
Inventor
Kazunori Ozawa
Koichi Oshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50086904A priority Critical patent/JPS5210596A/en
Publication of JPS5210596A publication Critical patent/JPS5210596A/en
Publication of JPS6128208B2 publication Critical patent/JPS6128208B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE: Making the condenser element of insualted grain boundary type semiconductor, SrTiO3 group ceramic semiconductor whose grain boundary is insualted, contain SiO2, ZrO2 and Nb2O5, to improve the temperature characteristic, the tan δ and the insulation resistance.
COPYRIGHT: (C)1977,JPO&Japio
JP50086904A 1975-07-16 1975-07-16 Insulated grain boundary type piezo-electric substance of polycrystall ine ceramic semiconductor Granted JPS5210596A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50086904A JPS5210596A (en) 1975-07-16 1975-07-16 Insulated grain boundary type piezo-electric substance of polycrystall ine ceramic semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50086904A JPS5210596A (en) 1975-07-16 1975-07-16 Insulated grain boundary type piezo-electric substance of polycrystall ine ceramic semiconductor

Publications (2)

Publication Number Publication Date
JPS5210596A true JPS5210596A (en) 1977-01-26
JPS6128208B2 JPS6128208B2 (en) 1986-06-28

Family

ID=13899813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50086904A Granted JPS5210596A (en) 1975-07-16 1975-07-16 Insulated grain boundary type piezo-electric substance of polycrystall ine ceramic semiconductor

Country Status (1)

Country Link
JP (1) JPS5210596A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2419923A1 (en) * 1978-03-13 1979-10-12 Philips Nv FRITTED BODY IN SEMICONDUCTOR CERAMIC MATERIAL BASED ON STRONTIUM TITANATE DOPED WITH NIOBIUM OR TANTALUM WITH ELECTRO-INSULATING LAYERS APPLIED TO THE LIMITS OF THE GRAINS
US4897219A (en) * 1983-02-10 1990-01-30 Matsushita Electric Industrial Co., Ltd. Voltage-dependent non-linear resistance ceramic composition
US20160163458A1 (en) * 2014-12-08 2016-06-09 Samsung Electro-Mechanics Co., Ltd. Ceramic dielectric composition and multilayer ceramic capacitor containing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2419923A1 (en) * 1978-03-13 1979-10-12 Philips Nv FRITTED BODY IN SEMICONDUCTOR CERAMIC MATERIAL BASED ON STRONTIUM TITANATE DOPED WITH NIOBIUM OR TANTALUM WITH ELECTRO-INSULATING LAYERS APPLIED TO THE LIMITS OF THE GRAINS
US4897219A (en) * 1983-02-10 1990-01-30 Matsushita Electric Industrial Co., Ltd. Voltage-dependent non-linear resistance ceramic composition
US20160163458A1 (en) * 2014-12-08 2016-06-09 Samsung Electro-Mechanics Co., Ltd. Ceramic dielectric composition and multilayer ceramic capacitor containing the same
US9627134B2 (en) * 2014-12-08 2017-04-18 Samsung Electro-Mechanics Co., Ltd. Ceramic dielectric composition and multilayer ceramic capacitor containing the same
US9947470B2 (en) 2014-12-08 2018-04-17 Samsung Electro-Mechanics Co., Ltd. Ceramic dielectric composition and multilayer ceramic capacitor containing the same

Also Published As

Publication number Publication date
JPS6128208B2 (en) 1986-06-28

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