JPS5372471A - Mis type semiconductor device - Google Patents

Mis type semiconductor device

Info

Publication number
JPS5372471A
JPS5372471A JP14776576A JP14776576A JPS5372471A JP S5372471 A JPS5372471 A JP S5372471A JP 14776576 A JP14776576 A JP 14776576A JP 14776576 A JP14776576 A JP 14776576A JP S5372471 A JPS5372471 A JP S5372471A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
mis type
mis
decreasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14776576A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14776576A priority Critical patent/JPS5372471A/en
Priority to US05/859,108 priority patent/US4154192A/en
Publication of JPS5372471A publication Critical patent/JPS5372471A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To manufacture the device with high breakdown voltage, by decreasing the valve resistance of Si substrate so that the switch back phenomenon is hardly caused.
COPYRIGHT: (C)1978,JPO&Japio
JP14776576A 1976-12-10 1976-12-10 Mis type semiconductor device Pending JPS5372471A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14776576A JPS5372471A (en) 1976-12-10 1976-12-10 Mis type semiconductor device
US05/859,108 US4154192A (en) 1976-12-10 1977-12-09 Manufacturing apparatus for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14776576A JPS5372471A (en) 1976-12-10 1976-12-10 Mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5372471A true JPS5372471A (en) 1978-06-27

Family

ID=15437658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14776576A Pending JPS5372471A (en) 1976-12-10 1976-12-10 Mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5372471A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394674A (en) * 1979-10-09 1983-07-19 Nippon Electric Co., Ltd. Insulated gate field effect transistor
US4506279A (en) * 1982-09-17 1985-03-19 Tokyo Shibaura Denki Kabushiki Kaisha Metal-oxide-semiconductor device with bilayered source and drain
US4684992A (en) * 1984-11-21 1987-08-04 Olympus Optical Co., Ltd. Solid state image sensor having means to reset and clear static induction transistor photoelements
US4733286A (en) * 1983-12-28 1988-03-22 Olympus Optical Co., Ltd. Semiconductor photoelectric converting device
US6091644A (en) * 1998-03-21 2000-07-18 Hsu; Ching-Hsiang Structure of a channel write/erase flash memory cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394674A (en) * 1979-10-09 1983-07-19 Nippon Electric Co., Ltd. Insulated gate field effect transistor
US4506279A (en) * 1982-09-17 1985-03-19 Tokyo Shibaura Denki Kabushiki Kaisha Metal-oxide-semiconductor device with bilayered source and drain
US4733286A (en) * 1983-12-28 1988-03-22 Olympus Optical Co., Ltd. Semiconductor photoelectric converting device
US4684992A (en) * 1984-11-21 1987-08-04 Olympus Optical Co., Ltd. Solid state image sensor having means to reset and clear static induction transistor photoelements
US6091644A (en) * 1998-03-21 2000-07-18 Hsu; Ching-Hsiang Structure of a channel write/erase flash memory cell

Similar Documents

Publication Publication Date Title
JPS51135373A (en) Semiconductor device
JPS5395571A (en) Semiconductor device
JPS5234671A (en) Semiconductor integrated circuit
JPS5316584A (en) Semiconductor control device
JPS52104075A (en) Semiconductor element
JPS538072A (en) Semiconductor device
JPS5243382A (en) Mos type diode
JPS5350683A (en) Mos type semiconductor device
JPS5326683A (en) Manufacture of semiconductor devic e
JPS5270774A (en) Semiconductor integrated circuit unit
JPS5353262A (en) Manufacture of semiconductor device
JPS51145267A (en) Manufacture of semiconductor device
JPS51134084A (en) Element for transmission line circuit
JPS51148388A (en) Semiconductor device including mis type capacitive element
JPS5320862A (en) Production of semiconductor device
JPS52141565A (en) Manufacture of semiconductor unit
JPS5211772A (en) Semiconductor device
JPS5231691A (en) Semiconductor luminous device
JPS5317280A (en) Production of semiconductor element
JPS52140262A (en) Thyristor circuit
JPS5369585A (en) Semiconductor device
JPS51117581A (en) Manufacturing method of mos type semiconductor equipment
JPS5217777A (en) Semiconductor device
JPS5330263A (en) Control of gate turn-off thyristor
JPS5324790A (en) Semiconductor device