JPS5210672A - Semi-conductor device - Google Patents

Semi-conductor device

Info

Publication number
JPS5210672A
JPS5210672A JP50086850A JP8685075A JPS5210672A JP S5210672 A JPS5210672 A JP S5210672A JP 50086850 A JP50086850 A JP 50086850A JP 8685075 A JP8685075 A JP 8685075A JP S5210672 A JPS5210672 A JP S5210672A
Authority
JP
Japan
Prior art keywords
conductor device
semi
metal
elctrode
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50086850A
Other languages
Japanese (ja)
Inventor
Takashi Osone
Masanori Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50086850A priority Critical patent/JPS5210672A/en
Publication of JPS5210672A publication Critical patent/JPS5210672A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:A metal with high melting point, having low sheet resistance which is used for the elctrode of the metal film gate or metal for wiring, etc., to obtain a temperature-proof oxidized semi-conductor device such as MOSFET which has high-speed action.
JP50086850A 1975-07-15 1975-07-15 Semi-conductor device Pending JPS5210672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50086850A JPS5210672A (en) 1975-07-15 1975-07-15 Semi-conductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50086850A JPS5210672A (en) 1975-07-15 1975-07-15 Semi-conductor device

Publications (1)

Publication Number Publication Date
JPS5210672A true JPS5210672A (en) 1977-01-27

Family

ID=13898276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50086850A Pending JPS5210672A (en) 1975-07-15 1975-07-15 Semi-conductor device

Country Status (1)

Country Link
JP (1) JPS5210672A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165338A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device and manufacture thereof
JPS5736393U (en) * 1980-08-11 1982-02-25
JPS5737856A (en) * 1980-08-20 1982-03-02 Fujitsu Ltd Semiconductor device
JPS58161344A (en) * 1982-03-19 1983-09-24 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4712291A (en) * 1985-06-06 1987-12-15 The United States Of America As Represented By The Secretary Of The Air Force Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs
JPS6419721A (en) * 1988-03-25 1989-01-23 Seiko Epson Corp Integrated circuit
JPS6419720A (en) * 1988-03-25 1989-01-23 Seiko Epson Corp Integrated circuit
US5559351A (en) * 1993-07-13 1996-09-24 Nippon Steel Corporation Semiconductor element having Cr in silicon dioxide
US6638816B2 (en) 2000-03-29 2003-10-28 Nec Electronics Corporation Integrated circuit device with MIM capacitance circuit and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110276A (en) * 1973-02-21 1974-10-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110276A (en) * 1973-02-21 1974-10-21

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165338A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device and manufacture thereof
JPS5736393U (en) * 1980-08-11 1982-02-25
JPS5737856A (en) * 1980-08-20 1982-03-02 Fujitsu Ltd Semiconductor device
JPS58161344A (en) * 1982-03-19 1983-09-24 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4712291A (en) * 1985-06-06 1987-12-15 The United States Of America As Represented By The Secretary Of The Air Force Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs
JPS6419721A (en) * 1988-03-25 1989-01-23 Seiko Epson Corp Integrated circuit
JPS6419720A (en) * 1988-03-25 1989-01-23 Seiko Epson Corp Integrated circuit
US5559351A (en) * 1993-07-13 1996-09-24 Nippon Steel Corporation Semiconductor element having Cr in silicon dioxide
US6638816B2 (en) 2000-03-29 2003-10-28 Nec Electronics Corporation Integrated circuit device with MIM capacitance circuit and method of manufacturing the same

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