JPS52107780A - Semiconductor unit - Google Patents
Semiconductor unitInfo
- Publication number
- JPS52107780A JPS52107780A JP2474976A JP2474976A JPS52107780A JP S52107780 A JPS52107780 A JP S52107780A JP 2474976 A JP2474976 A JP 2474976A JP 2474976 A JP2474976 A JP 2474976A JP S52107780 A JPS52107780 A JP S52107780A
- Authority
- JP
- Japan
- Prior art keywords
- scarcity
- semiconductor unit
- electric field
- degrating
- weaken
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To product the pressure-proof of element from degrating by providing the electric field to weaken the electric field owing to scarcity scarcity layer round pellet on the static induction type thyristor of center gate constitution.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2474976A JPS52107780A (en) | 1976-03-08 | 1976-03-08 | Semiconductor unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2474976A JPS52107780A (en) | 1976-03-08 | 1976-03-08 | Semiconductor unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52107780A true JPS52107780A (en) | 1977-09-09 |
| JPS5753991B2 JPS5753991B2 (en) | 1982-11-16 |
Family
ID=12146781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2474976A Granted JPS52107780A (en) | 1976-03-08 | 1976-03-08 | Semiconductor unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS52107780A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6139578A (en) * | 1984-07-31 | 1986-02-25 | Toyo Electric Mfg Co Ltd | Electrostatic induction type thyristor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3465216A (en) * | 1966-07-22 | 1969-09-02 | Stanislas Teszner | Bistable semiconductor device for heavy currents |
| JPS49122673A (en) * | 1973-03-23 | 1974-11-22 | ||
| JPS5111579A (en) * | 1974-07-19 | 1976-01-29 | Meidensha Electric Mfg Co Ltd | HANDOTA ISOCHI |
| JPS5279667A (en) * | 1975-12-25 | 1977-07-04 | Toshiba Corp | Semiconductor device |
-
1976
- 1976-03-08 JP JP2474976A patent/JPS52107780A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3465216A (en) * | 1966-07-22 | 1969-09-02 | Stanislas Teszner | Bistable semiconductor device for heavy currents |
| JPS49122673A (en) * | 1973-03-23 | 1974-11-22 | ||
| JPS5111579A (en) * | 1974-07-19 | 1976-01-29 | Meidensha Electric Mfg Co Ltd | HANDOTA ISOCHI |
| JPS5279667A (en) * | 1975-12-25 | 1977-07-04 | Toshiba Corp | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6139578A (en) * | 1984-07-31 | 1986-02-25 | Toyo Electric Mfg Co Ltd | Electrostatic induction type thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5753991B2 (en) | 1982-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5293285A (en) | Structure for semiconductor device | |
| JPS5315081A (en) | Junction type field effect transistor and its production | |
| JPS5225572A (en) | Resin-seal type semiconductor device | |
| JPS5279667A (en) | Semiconductor device | |
| JPS52104075A (en) | Semiconductor element | |
| JPS538072A (en) | Semiconductor device | |
| JPS5236980A (en) | Heat sink for semiconductor devices | |
| JPS5267838A (en) | High frequency heater | |
| JPS51118384A (en) | Manufacturing prouss for mos type semiconductor unit | |
| JPS51123073A (en) | Insulated gate (type) semiconductor device | |
| JPS5363866A (en) | Production of semiconductor device | |
| JPS5220773A (en) | Semi-conductor element | |
| JPS5245294A (en) | Semiconductor device | |
| JPS51118038A (en) | Cooling device of semiconductor rectifier | |
| JPS5320782A (en) | Hall element | |
| JPS52179A (en) | Method of fabricating semiconductor | |
| JPS52136576A (en) | Semiconductor device | |
| JPS52141565A (en) | Manufacture of semiconductor unit | |
| JPS5273673A (en) | Production of semiconductor device | |
| JPS5267837A (en) | High frequency heater | |
| JPS5380180A (en) | Semiconductor device | |
| JPS5295973A (en) | Manufacture of semiconductor unit with heat sink | |
| JPS5333572A (en) | Production of semiconductor device | |
| JPS5252372A (en) | Semiconductor device | |
| JPS5245882A (en) | Gunn effect semiconductor device |