JPS52119085A - Semiconductor memory element - Google Patents

Semiconductor memory element

Info

Publication number
JPS52119085A
JPS52119085A JP2577776A JP2577776A JPS52119085A JP S52119085 A JPS52119085 A JP S52119085A JP 2577776 A JP2577776 A JP 2577776A JP 2577776 A JP2577776 A JP 2577776A JP S52119085 A JPS52119085 A JP S52119085A
Authority
JP
Japan
Prior art keywords
memory element
semiconductor memory
porming
accumulate
former
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2577776A
Other languages
Japanese (ja)
Inventor
Mototaka Kamoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2577776A priority Critical patent/JPS52119085A/en
Publication of JPS52119085A publication Critical patent/JPS52119085A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a memory element of MIS structure by providing a conductive passage within the semiconductor substrate and forming a porming a portion which is able to accumulate and discharge electric charge adjacent to the former.
JP2577776A 1976-03-10 1976-03-10 Semiconductor memory element Pending JPS52119085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2577776A JPS52119085A (en) 1976-03-10 1976-03-10 Semiconductor memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2577776A JPS52119085A (en) 1976-03-10 1976-03-10 Semiconductor memory element

Publications (1)

Publication Number Publication Date
JPS52119085A true JPS52119085A (en) 1977-10-06

Family

ID=12175264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2577776A Pending JPS52119085A (en) 1976-03-10 1976-03-10 Semiconductor memory element

Country Status (1)

Country Link
JP (1) JPS52119085A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661139A (en) * 1979-10-25 1981-05-26 Seiko Epson Corp Manufacture of semiconductor device
US4551741A (en) * 1980-07-07 1985-11-05 Mitsubishi Denki Kabushiki Kaisha Dram with polysi bit lines and added junction capacitance
JPH056981A (en) * 1980-01-07 1993-01-14 Texas Instr Inc <Ti> Semiconductor memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661139A (en) * 1979-10-25 1981-05-26 Seiko Epson Corp Manufacture of semiconductor device
JPH056981A (en) * 1980-01-07 1993-01-14 Texas Instr Inc <Ti> Semiconductor memory
US4551741A (en) * 1980-07-07 1985-11-05 Mitsubishi Denki Kabushiki Kaisha Dram with polysi bit lines and added junction capacitance

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