JPS538582A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS538582A
JPS538582A JP8321576A JP8321576A JPS538582A JP S538582 A JPS538582 A JP S538582A JP 8321576 A JP8321576 A JP 8321576A JP 8321576 A JP8321576 A JP 8321576A JP S538582 A JPS538582 A JP S538582A
Authority
JP
Japan
Prior art keywords
semiconductor memory
region
storage portion
charge storage
memory unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8321576A
Other languages
Japanese (ja)
Inventor
Yasutaka Horiba
Isao Okura
Masashi Omori
Kazuhiro Shimotori
Kenji Anami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8321576A priority Critical patent/JPS538582A/en
Publication of JPS538582A publication Critical patent/JPS538582A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make it possible to enlarge the area of charge storage portion of semiconductor memory, by introducing an impurity which is a dielectric layer formed on the layery region constituting an electrode of the charge storage portion, as a shielding film into a region between impurity introducing region, which is located on the substrate and which forms the other electrode of the charge storage portion, and the other impurity introducing region which constitutes the read out line.
JP8321576A 1976-07-12 1976-07-12 Semiconductor memory unit Pending JPS538582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8321576A JPS538582A (en) 1976-07-12 1976-07-12 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8321576A JPS538582A (en) 1976-07-12 1976-07-12 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS538582A true JPS538582A (en) 1978-01-26

Family

ID=13796084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8321576A Pending JPS538582A (en) 1976-07-12 1976-07-12 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS538582A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6192841A (en) * 1984-10-13 1986-05-10 豊田合成株式会社 Resin molded shape with foamed sheet

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN=1972 *
IEEE JOURNAL OF SOLID-STATE CIRCUITS=1973US *
IEEE TRANSACTION ON ELECTRON DEVICES=19761S *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6192841A (en) * 1984-10-13 1986-05-10 豊田合成株式会社 Resin molded shape with foamed sheet

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