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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Filing date
Publication date
Application filed by Matsushita Electric Industrial Co LtdfiledCriticalMatsushita Electric Industrial Co Ltd
Priority to JP4382476ApriorityCriticalpatent/JPS52127080A/en
Publication of JPS52127080ApublicationCriticalpatent/JPS52127080A/en
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Abstract
PURPOSE: To obtain a fine and highly integrated MOS device by embedding a gate region into a semiconductor substrate and making the surface of the final structure flat.