JPS52135687A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52135687A
JPS52135687A JP5267576A JP5267576A JPS52135687A JP S52135687 A JPS52135687 A JP S52135687A JP 5267576 A JP5267576 A JP 5267576A JP 5267576 A JP5267576 A JP 5267576A JP S52135687 A JPS52135687 A JP S52135687A
Authority
JP
Japan
Prior art keywords
directly under
collector regions
semiconductor device
emitter
those directly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5267576A
Other languages
Japanese (ja)
Other versions
JPS5952545B2 (en
Inventor
Fujio Masuoka
Tetsuya Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51052675A priority Critical patent/JPS5952545B2/en
Publication of JPS52135687A publication Critical patent/JPS52135687A/en
Publication of JPS5952545B2 publication Critical patent/JPS5952545B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To produce effective emitter injection only directly under collector regions and improve switching characteristics by forming the emitter-base junctions other than those directly under the collector regions of inverters composed of reverse transistors deeper within the substrate than those directly under the collector regions in an I<2>L.
JP51052675A 1976-05-08 1976-05-08 semiconductor equipment Expired JPS5952545B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51052675A JPS5952545B2 (en) 1976-05-08 1976-05-08 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51052675A JPS5952545B2 (en) 1976-05-08 1976-05-08 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS52135687A true JPS52135687A (en) 1977-11-12
JPS5952545B2 JPS5952545B2 (en) 1984-12-20

Family

ID=12921442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51052675A Expired JPS5952545B2 (en) 1976-05-08 1976-05-08 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5952545B2 (en)

Also Published As

Publication number Publication date
JPS5952545B2 (en) 1984-12-20

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