JPS52146568A - Production of silicon gate mos type semiconductor integrated circuit device - Google Patents

Production of silicon gate mos type semiconductor integrated circuit device

Info

Publication number
JPS52146568A
JPS52146568A JP6320576A JP6320576A JPS52146568A JP S52146568 A JPS52146568 A JP S52146568A JP 6320576 A JP6320576 A JP 6320576A JP 6320576 A JP6320576 A JP 6320576A JP S52146568 A JPS52146568 A JP S52146568A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
type semiconductor
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6320576A
Other languages
Japanese (ja)
Inventor
Sokichi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6320576A priority Critical patent/JPS52146568A/en
Publication of JPS52146568A publication Critical patent/JPS52146568A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To evade the variation in threshold voltage by forming a N-implanted layer by an ion implantation method between Si gate electrodes and a gate oxide film and blocking the impurity diffusion to the gate oxide film.
COPYRIGHT: (C)1977,JPO&Japio
JP6320576A 1976-05-31 1976-05-31 Production of silicon gate mos type semiconductor integrated circuit device Pending JPS52146568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6320576A JPS52146568A (en) 1976-05-31 1976-05-31 Production of silicon gate mos type semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6320576A JPS52146568A (en) 1976-05-31 1976-05-31 Production of silicon gate mos type semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS52146568A true JPS52146568A (en) 1977-12-06

Family

ID=13222462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6320576A Pending JPS52146568A (en) 1976-05-31 1976-05-31 Production of silicon gate mos type semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS52146568A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55145373A (en) * 1979-04-28 1980-11-12 Tdk Corp Fabricating method of semiconductor device
JPS5756970A (en) * 1980-09-22 1982-04-05 Oki Electric Ind Co Ltd Manufacture of insulated gate type field effect semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55145373A (en) * 1979-04-28 1980-11-12 Tdk Corp Fabricating method of semiconductor device
JPS5756970A (en) * 1980-09-22 1982-04-05 Oki Electric Ind Co Ltd Manufacture of insulated gate type field effect semiconductor device

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