JPS51116675A - Manufacturing method for a semiconductor device - Google Patents

Manufacturing method for a semiconductor device

Info

Publication number
JPS51116675A
JPS51116675A JP4082175A JP4082175A JPS51116675A JP S51116675 A JPS51116675 A JP S51116675A JP 4082175 A JP4082175 A JP 4082175A JP 4082175 A JP4082175 A JP 4082175A JP S51116675 A JPS51116675 A JP S51116675A
Authority
JP
Japan
Prior art keywords
silicon film
manufacturing
semiconductor device
impurity diffusion
diffusion area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4082175A
Other languages
Japanese (ja)
Inventor
Yoshinobu Monma
Katsuyuki Inayoshi
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4082175A priority Critical patent/JPS51116675A/en
Publication of JPS51116675A publication Critical patent/JPS51116675A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To form a good ohmic contact between an impurity diffusion area and a silicon film by implanting impure material in a silicon film in advacne before attaching electrode metal according to the method of the ion implantation, and by characterizing the silicon film as one having the same conductivity as the impurity diffusion area beneath it.
COPYRIGHT: (C)1976,JPO&Japio
JP4082175A 1975-04-05 1975-04-05 Manufacturing method for a semiconductor device Pending JPS51116675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4082175A JPS51116675A (en) 1975-04-05 1975-04-05 Manufacturing method for a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4082175A JPS51116675A (en) 1975-04-05 1975-04-05 Manufacturing method for a semiconductor device

Publications (1)

Publication Number Publication Date
JPS51116675A true JPS51116675A (en) 1976-10-14

Family

ID=12591314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4082175A Pending JPS51116675A (en) 1975-04-05 1975-04-05 Manufacturing method for a semiconductor device

Country Status (1)

Country Link
JP (1) JPS51116675A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574175A (en) * 1978-11-29 1980-06-04 Nec Corp Preparing interpolation type mos semiconductor device
JPS5678121A (en) * 1979-11-29 1981-06-26 Toshiba Corp Manufacture of semiconductor device
JPS60126869A (en) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6180863A (en) * 1984-09-27 1986-04-24 Toshiba Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940860A (en) * 1972-08-25 1974-04-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940860A (en) * 1972-08-25 1974-04-17

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574175A (en) * 1978-11-29 1980-06-04 Nec Corp Preparing interpolation type mos semiconductor device
JPS5678121A (en) * 1979-11-29 1981-06-26 Toshiba Corp Manufacture of semiconductor device
JPS60126869A (en) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6180863A (en) * 1984-09-27 1986-04-24 Toshiba Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS57113289A (en) Semiconductor device and its manufacture
JPS57196573A (en) Manufacture of mos type semiconductor device
JPS53142196A (en) Bipolar type semiconductor device
JPS5559759A (en) Semiconductor device
JPS5370687A (en) Production of semiconductor device
JPS546480A (en) Semiconductor device
JPS53147481A (en) Semiconductor device and production of the same
JPS544084A (en) Manufacture for semiconductor integrated circuit
JPS5274280A (en) Semiconductor device and its production
JPS5588366A (en) Semiconductor device
JPS5360171A (en) Electrode for silicon substrate and its production
JPS51135366A (en) Method of forming electrode film on silicon semiconductor device
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS53123673A (en) Manufacture of semiconductor device
JPS5335374A (en) Production of semiconductor device
JPS53129980A (en) Production of mos semiconductor device
JPS5329668A (en) Production of semiconductor device
JPS539481A (en) Production of semiconductor device
JPS52144288A (en) Preparation of electrode in semiconductor device
JPS52128073A (en) Manufacture of semiconductor device
JPS5362984A (en) Production of semiconductor device
JPS5210673A (en) Manufacturing method of silicon semi-conductor device
JPS53137678A (en) Manufacture for mos type semiconductor device
JPS5268379A (en) Semiconductor device
JPS5214377A (en) Semiconductor device