JPS52154343A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS52154343A
JPS52154343A JP7190876A JP7190876A JPS52154343A JP S52154343 A JPS52154343 A JP S52154343A JP 7190876 A JP7190876 A JP 7190876A JP 7190876 A JP7190876 A JP 7190876A JP S52154343 A JPS52154343 A JP S52154343A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
obout
atoms
simply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7190876A
Other languages
Japanese (ja)
Inventor
Eisuke Ichinohe
Tadanaka Yoneda
Shiro Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7190876A priority Critical patent/JPS52154343A/en
Publication of JPS52154343A publication Critical patent/JPS52154343A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To simply and easily perform the phosphorus diffusion of a low concentration of obout. 1011 to 1015 atoms/cm2 by performing high temperature tively low temperature.
COPYRIGHT: (C)1977,JPO&Japio
JP7190876A 1976-06-17 1976-06-17 Production of semiconductor device Pending JPS52154343A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7190876A JPS52154343A (en) 1976-06-17 1976-06-17 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7190876A JPS52154343A (en) 1976-06-17 1976-06-17 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS52154343A true JPS52154343A (en) 1977-12-22

Family

ID=13474100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7190876A Pending JPS52154343A (en) 1976-06-17 1976-06-17 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS52154343A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111758A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Heat treatment unit and boat pick up method from heat treatment unit
CN102758256A (en) * 2012-07-11 2012-10-31 苏州阿特斯阳光电力科技有限公司 Phosphorus diffusion method for crystal silicon wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111758A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Heat treatment unit and boat pick up method from heat treatment unit
CN102758256A (en) * 2012-07-11 2012-10-31 苏州阿特斯阳光电力科技有限公司 Phosphorus diffusion method for crystal silicon wafer
CN102758256B (en) * 2012-07-11 2015-04-22 苏州阿特斯阳光电力科技有限公司 Phosphorus diffusion method for crystal silicon wafer

Similar Documents

Publication Publication Date Title
JPS5244186A (en) Semiconductor intergrated circuit device
JPS51118395A (en) Semiconductor emitting unit and manufacturing process
JPS52154343A (en) Production of semiconductor device
JPS5338271A (en) Semiconductor device
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS5377168A (en) Production of semiconductor device
JPS51123557A (en) Impurity concentration measurement mask of semiconductor base
JPS5273673A (en) Production of semiconductor device
JPS54586A (en) Production of semiconductor device
JPS52143515A (en) Tube dividing device
JPS52132776A (en) Manufacture for semiconductor unit
JPS544568A (en) Semiconductor device and production of the same
JPS5326663A (en) Manu facture of semiconductor device
JPS5424574A (en) Manufacture for semiconductor device
JPS53140976A (en) Semiconductor device
JPS5370666A (en) Production of semiconductor device
JPS5336470A (en) Manufacture of semiconductor device
JPS52128059A (en) Manufacture of semiconductor device
JPS5418670A (en) Manufacture of semiconductor device
JPS52178A (en) Pnp transistor
JPS52123877A (en) Production of semiconductor device
JPS5350670A (en) Production of semiconductor device
JPS52119862A (en) Semi-conductor device and its manufacture
JPS5217765A (en) Method to diffuse arsenic in a silicone wafer
JPS51118960A (en) Wafer form semiconductor doping material