Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co LtdfiledCriticalMatsushita Electric Industrial Co Ltd
Priority to JP50094027ApriorityCriticalpatent/JPS584455B2/en
Publication of JPS5217779ApublicationCriticalpatent/JPS5217779A/en
Publication of JPS584455B2publicationCriticalpatent/JPS584455B2/en
PURPOSE: To produce n-type insualr domain of qualified crystal without distortion, by providing a distinct path for current with inplanted insulation in the process to make SiO2 porous by means of anodic oxidation.
COPYRIGHT: (C)1977,JPO&Japio
JP50094027A1975-07-311975-07-31
hand tai souchi no seizou houhou
ExpiredJPS584455B2
(en)