JPS51139263A - Method of selective oxidation of silicon substrate - Google Patents

Method of selective oxidation of silicon substrate

Info

Publication number
JPS51139263A
JPS51139263A JP50062860A JP6286075A JPS51139263A JP S51139263 A JPS51139263 A JP S51139263A JP 50062860 A JP50062860 A JP 50062860A JP 6286075 A JP6286075 A JP 6286075A JP S51139263 A JPS51139263 A JP S51139263A
Authority
JP
Japan
Prior art keywords
silicon substrate
selective oxidation
oxidation
silicon
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50062860A
Other languages
Japanese (ja)
Inventor
Hideo Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50062860A priority Critical patent/JPS51139263A/en
Priority to DE19762623419 priority patent/DE2623419A1/en
Priority to NL7605712A priority patent/NL7605712A/en
Publication of JPS51139263A publication Critical patent/JPS51139263A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H10W10/0124—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves the regions having non-rectangular shapes, e.g. rounded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To make flat silicon surface and oxide surface in the selective oxidation of silicon substrate by removing part of a silicon substrate, selectively oxidizing that portion such as to provide an oxide surface raised with respect to the silicon surface, subsequently causing oxidation of the whole surface and then removing oxide formed by the oxidation.
COPYRIGHT: (C)1976,JPO&Japio
JP50062860A 1975-05-28 1975-05-28 Method of selective oxidation of silicon substrate Pending JPS51139263A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50062860A JPS51139263A (en) 1975-05-28 1975-05-28 Method of selective oxidation of silicon substrate
DE19762623419 DE2623419A1 (en) 1975-05-28 1976-05-25 Forming insulated zone on silicon substrate - by multistep process comprising etching and silicon dioxide layers formation and removal (NL301176)
NL7605712A NL7605712A (en) 1975-05-28 1976-05-26 PROCEDURE FOR THE SELECTIVE OXIDATION OF A SILICONE SUBSTRATE AND OBTAINED PRODUCTION.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50062860A JPS51139263A (en) 1975-05-28 1975-05-28 Method of selective oxidation of silicon substrate

Publications (1)

Publication Number Publication Date
JPS51139263A true JPS51139263A (en) 1976-12-01

Family

ID=13212460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50062860A Pending JPS51139263A (en) 1975-05-28 1975-05-28 Method of selective oxidation of silicon substrate

Country Status (3)

Country Link
JP (1) JPS51139263A (en)
DE (1) DE2623419A1 (en)
NL (1) NL7605712A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737849A (en) * 1980-08-20 1982-03-02 Toshiba Corp Manufacture of semiconductor device
JPS5760852A (en) * 1977-01-26 1982-04-13 Mostek Corp Method of producing semiconductor device
JPH07106321A (en) * 1993-10-07 1995-04-21 Nec Corp Method for manufacturing semiconductor device
WO1996036073A1 (en) * 1995-05-08 1996-11-14 Hitachi, Ltd. Semiconductor device and its manufacture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0764980A1 (en) * 1995-09-20 1997-03-26 Lucent Technologies Inc. Improved local oxidation of silicon

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PHILIPS RES. REPTS=1970 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760852A (en) * 1977-01-26 1982-04-13 Mostek Corp Method of producing semiconductor device
JPS62290181A (en) * 1977-01-26 1987-12-17 モステツク・コ−ポレイシヨン Manufacture of semiconductor device
JPH0917799A (en) * 1977-01-26 1997-01-17 Sgs Thomson Microelectron Inc Method for preparing substrate surface for semiconductor device
JPS5737849A (en) * 1980-08-20 1982-03-02 Toshiba Corp Manufacture of semiconductor device
JPH07106321A (en) * 1993-10-07 1995-04-21 Nec Corp Method for manufacturing semiconductor device
WO1996036073A1 (en) * 1995-05-08 1996-11-14 Hitachi, Ltd. Semiconductor device and its manufacture

Also Published As

Publication number Publication date
DE2623419A1 (en) 1976-12-02
NL7605712A (en) 1976-11-30

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