JPS5219083A - Field-effect tansistor - Google Patents

Field-effect tansistor

Info

Publication number
JPS5219083A
JPS5219083A JP9505675A JP9505675A JPS5219083A JP S5219083 A JPS5219083 A JP S5219083A JP 9505675 A JP9505675 A JP 9505675A JP 9505675 A JP9505675 A JP 9505675A JP S5219083 A JPS5219083 A JP S5219083A
Authority
JP
Japan
Prior art keywords
tansistor
effect
field
elevate
promote
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9505675A
Other languages
Japanese (ja)
Inventor
Katsuhiko Ishida
Takashi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Priority to JP9505675A priority Critical patent/JPS5219083A/en
Publication of JPS5219083A publication Critical patent/JPS5219083A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: In order to promote the frequency characteristics and elevate the withstand voltage through reducing the electrostatic capacity between gate and source, in multi-channel junction type JFET.
COPYRIGHT: (C)1977,JPO&Japio
JP9505675A 1975-08-06 1975-08-06 Field-effect tansistor Pending JPS5219083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9505675A JPS5219083A (en) 1975-08-06 1975-08-06 Field-effect tansistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9505675A JPS5219083A (en) 1975-08-06 1975-08-06 Field-effect tansistor

Publications (1)

Publication Number Publication Date
JPS5219083A true JPS5219083A (en) 1977-01-14

Family

ID=14127377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9505675A Pending JPS5219083A (en) 1975-08-06 1975-08-06 Field-effect tansistor

Country Status (1)

Country Link
JP (1) JPS5219083A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5666076A (en) * 1979-11-02 1981-06-04 Tohoku Metal Ind Ltd Semiconductor device
JPS56108274A (en) * 1980-01-31 1981-08-27 Tohoku Metal Ind Ltd Manufacture of semiconductor device
JPS56108273A (en) * 1980-01-31 1981-08-27 Tohoku Metal Ind Ltd Semiconductor device
JPS5911684A (en) * 1982-07-13 1984-01-21 Toyo Electric Mfg Co Ltd Forming method for buried gate of semiconductor device
JPS5911683A (en) * 1982-07-13 1984-01-21 Toyo Electric Mfg Co Ltd Forming method for buried gate of semiconductor device
JPS5911685A (en) * 1982-07-13 1984-01-21 Toyo Electric Mfg Co Ltd Forming method for buried gate of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5666076A (en) * 1979-11-02 1981-06-04 Tohoku Metal Ind Ltd Semiconductor device
JPS56108274A (en) * 1980-01-31 1981-08-27 Tohoku Metal Ind Ltd Manufacture of semiconductor device
JPS56108273A (en) * 1980-01-31 1981-08-27 Tohoku Metal Ind Ltd Semiconductor device
JPS5911684A (en) * 1982-07-13 1984-01-21 Toyo Electric Mfg Co Ltd Forming method for buried gate of semiconductor device
JPS5911683A (en) * 1982-07-13 1984-01-21 Toyo Electric Mfg Co Ltd Forming method for buried gate of semiconductor device
JPS5911685A (en) * 1982-07-13 1984-01-21 Toyo Electric Mfg Co Ltd Forming method for buried gate of semiconductor device

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