JPS5224471A - Junction field effect transistor and its process - Google Patents

Junction field effect transistor and its process

Info

Publication number
JPS5224471A
JPS5224471A JP50100845A JP10084575A JPS5224471A JP S5224471 A JPS5224471 A JP S5224471A JP 50100845 A JP50100845 A JP 50100845A JP 10084575 A JP10084575 A JP 10084575A JP S5224471 A JPS5224471 A JP S5224471A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
junction field
gate
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50100845A
Other languages
Japanese (ja)
Other versions
JPS584830B2 (en
Inventor
Shotaro Umebachi
Atsushi Nagashima
Kunihiko Asahi
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50100845A priority Critical patent/JPS584830B2/en
Publication of JPS5224471A publication Critical patent/JPS5224471A/en
Publication of JPS584830B2 publication Critical patent/JPS584830B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: In J FET having Gals-GaAlAs hereto junction, utilizing difference in errosion speed in crystal direction, gate length and distances between gate and source and drain and each electrode are shortened.
COPYRIGHT: (C)1977,JPO&Japio
JP50100845A 1975-08-19 1975-08-19 Manufacturing method of junction field effect transistor Expired JPS584830B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50100845A JPS584830B2 (en) 1975-08-19 1975-08-19 Manufacturing method of junction field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50100845A JPS584830B2 (en) 1975-08-19 1975-08-19 Manufacturing method of junction field effect transistor

Publications (2)

Publication Number Publication Date
JPS5224471A true JPS5224471A (en) 1977-02-23
JPS584830B2 JPS584830B2 (en) 1983-01-27

Family

ID=14284643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50100845A Expired JPS584830B2 (en) 1975-08-19 1975-08-19 Manufacturing method of junction field effect transistor

Country Status (1)

Country Link
JP (1) JPS584830B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63293830A (en) * 1987-05-26 1988-11-30 Nec Corp Etching method for semiconductor crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509378A (en) * 1973-05-23 1975-01-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509378A (en) * 1973-05-23 1975-01-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63293830A (en) * 1987-05-26 1988-11-30 Nec Corp Etching method for semiconductor crystal

Also Published As

Publication number Publication date
JPS584830B2 (en) 1983-01-27

Similar Documents

Publication Publication Date Title
GB1543363A (en) Dual-gate schottky barrier gate field effect transistors
CA1028067A (en) Schottky gate field effect transistor
JPS5425171A (en) Manufacture of field effect semiconductor device
JPS5362985A (en) Mis type field effect transistor and its production
JPS5224471A (en) Junction field effect transistor and its process
JPS5215274A (en) Semiconductor device
JPS52137922A (en) Solid photographing device
JPS5384571A (en) Insulating gate type field effect transistor and its manufacture
JPS53143177A (en) Production of field effect transistor
JPS539479A (en) Production of field effect transistors
JPS5212583A (en) Field effect transistor
JPS5273681A (en) Field effect transistor
JPS52127181A (en) Insulated gate type filed effect transistor
JPS5439578A (en) Field effect semiconductor device of isolation gate type
JPS5263074A (en) Insulated gate type field effect transistor and its production
JPS51132977A (en) Junction-type field effect transistor process
JPS5242080A (en) Micro channel type insulated gate field effect transistor and process for productin thereof
JPS5286779A (en) Semiconductor device
JPS51113471A (en) The manufacturing method of flat-shaped field-effect transistor
JPS5410684A (en) Using method of schottky gate type field effect transistors
JPS5213781A (en) Junction type field effect transistor
JPS5418687A (en) Insulating gate field effect transistor
JPS5527681A (en) Field effect transistor
JPS5317284A (en) Production of semiconductor device
JPS5219979A (en) Mis type fet device and manufacturing process for it