JPS5232000A - Process of silicon nitride thin film - Google Patents

Process of silicon nitride thin film

Info

Publication number
JPS5232000A
JPS5232000A JP10824575A JP10824575A JPS5232000A JP S5232000 A JPS5232000 A JP S5232000A JP 10824575 A JP10824575 A JP 10824575A JP 10824575 A JP10824575 A JP 10824575A JP S5232000 A JPS5232000 A JP S5232000A
Authority
JP
Japan
Prior art keywords
thin film
silicon nitride
nitride thin
insulating
condenser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10824575A
Other languages
Japanese (ja)
Other versions
JPS5843322B2 (en
Inventor
Atsuo Senda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP50108245A priority Critical patent/JPS5843322B2/en
Publication of JPS5232000A publication Critical patent/JPS5232000A/en
Publication of JPS5843322B2 publication Critical patent/JPS5843322B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Insulating Materials (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:The silicon nitride thin film, which is used for such insulating foil as insulating zone of condenser, can be obtained in a comparatively lower temperature and in a fairly shorter period.
JP50108245A 1975-09-06 1975-09-06 Titsukakei Sohaku Makuno Seizouhouhou Expired JPS5843322B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50108245A JPS5843322B2 (en) 1975-09-06 1975-09-06 Titsukakei Sohaku Makuno Seizouhouhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50108245A JPS5843322B2 (en) 1975-09-06 1975-09-06 Titsukakei Sohaku Makuno Seizouhouhou

Publications (2)

Publication Number Publication Date
JPS5232000A true JPS5232000A (en) 1977-03-10
JPS5843322B2 JPS5843322B2 (en) 1983-09-26

Family

ID=14479751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50108245A Expired JPS5843322B2 (en) 1975-09-06 1975-09-06 Titsukakei Sohaku Makuno Seizouhouhou

Country Status (1)

Country Link
JP (1) JPS5843322B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53127771U (en) * 1977-03-18 1978-10-11
JP2015106572A (en) * 2013-11-28 2015-06-08 大陽日酸株式会社 Method for forming silicon nitride film, and silicon nitride film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53127771U (en) * 1977-03-18 1978-10-11
JP2015106572A (en) * 2013-11-28 2015-06-08 大陽日酸株式会社 Method for forming silicon nitride film, and silicon nitride film

Also Published As

Publication number Publication date
JPS5843322B2 (en) 1983-09-26

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