JPS51144400A - Process for production of thin film silicon nitride - Google Patents
Process for production of thin film silicon nitrideInfo
- Publication number
- JPS51144400A JPS51144400A JP6859475A JP6859475A JPS51144400A JP S51144400 A JPS51144400 A JP S51144400A JP 6859475 A JP6859475 A JP 6859475A JP 6859475 A JP6859475 A JP 6859475A JP S51144400 A JPS51144400 A JP S51144400A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- silicon nitride
- production
- film silicon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:Method to produce easily the thin film of silicon nitride with stoichiometric composition on the substrate at a relatively low temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6859475A JPS51144400A (en) | 1975-06-09 | 1975-06-09 | Process for production of thin film silicon nitride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6859475A JPS51144400A (en) | 1975-06-09 | 1975-06-09 | Process for production of thin film silicon nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51144400A true JPS51144400A (en) | 1976-12-11 |
Family
ID=13378260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6859475A Pending JPS51144400A (en) | 1975-06-09 | 1975-06-09 | Process for production of thin film silicon nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51144400A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59172715A (en) * | 1983-03-22 | 1984-09-29 | Nec Corp | Molecular beam generating equipment |
| JP2002241930A (en) * | 2001-02-19 | 2002-08-28 | Hamamatsu Photonics Kk | Method for deposition of nitride thin film |
-
1975
- 1975-06-09 JP JP6859475A patent/JPS51144400A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59172715A (en) * | 1983-03-22 | 1984-09-29 | Nec Corp | Molecular beam generating equipment |
| JP2002241930A (en) * | 2001-02-19 | 2002-08-28 | Hamamatsu Photonics Kk | Method for deposition of nitride thin film |
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