JPS5240971A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5240971A
JPS5240971A JP51114579A JP11457976A JPS5240971A JP S5240971 A JPS5240971 A JP S5240971A JP 51114579 A JP51114579 A JP 51114579A JP 11457976 A JP11457976 A JP 11457976A JP S5240971 A JPS5240971 A JP S5240971A
Authority
JP
Japan
Prior art keywords
semiconductor device
alloy
dumet
gold
coaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51114579A
Other languages
English (en)
Inventor
Tei Robinson Jiei
Ei Edowaazu Aaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS5240971A publication Critical patent/JPS5240971A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Connections Arranged To Contact A Plurality Of Conductors (AREA)
JP51114579A 1975-09-25 1976-09-24 Semiconductor device Pending JPS5240971A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/616,718 US4042951A (en) 1975-09-25 1975-09-25 Gold-germanium alloy contacts for a semiconductor device

Publications (1)

Publication Number Publication Date
JPS5240971A true JPS5240971A (en) 1977-03-30

Family

ID=24470683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51114579A Pending JPS5240971A (en) 1975-09-25 1976-09-24 Semiconductor device

Country Status (4)

Country Link
US (1) US4042951A (ja)
JP (1) JPS5240971A (ja)
DE (1) DE2643147A1 (ja)
GB (1) GB1541647A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011102429A (ja) * 2009-08-25 2011-05-26 Rohm & Haas Electronic Materials Llc ケイ化ニッケルの向上した形成方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3122387A1 (de) * 1981-06-05 1982-12-23 Deutsche Itt Industries Gmbh, 7800 Freiburg "glasumhuellte halbleiterdiode und verfahren zur herstellung"
US4878099A (en) * 1982-12-08 1989-10-31 International Rectifier Corporation Metallizing system for semiconductor wafers
US4965173A (en) * 1982-12-08 1990-10-23 International Rectifier Corporation Metallizing process and structure for semiconductor devices
SE8306663L (sv) * 1982-12-08 1984-06-09 Int Rectifier Corp Forfarande for framstellning av halvledaranordning
JPS59213145A (ja) * 1983-05-18 1984-12-03 Toshiba Corp 半導体装置及びその製造方法
DE3402970A1 (de) * 1984-01-28 1985-08-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Kontaktierungssystem fuer 2-polige elektronische bauelemente, insbesondere halbleiterbauelemente
US4663820A (en) * 1984-06-11 1987-05-12 International Rectifier Corporation Metallizing process for semiconductor devices
NL8600021A (nl) * 1986-01-08 1987-08-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een metallisatie met een dikke aansluitelektrode wordt aangebracht.
US4769882A (en) * 1986-10-22 1988-09-13 The Singer Company Method for making piezoelectric sensing elements with gold-germanium bonding layers
US5160793A (en) * 1991-06-07 1992-11-03 Eastman Kodak Company Shallow ohmic contacts to n-Alx Ga1-x As
US5248902A (en) * 1991-08-30 1993-09-28 General Instrument Corporation Surface mounting diode
JP2579970Y2 (ja) * 1992-06-24 1998-09-03 株式会社小松製作所 半導体装置
US5851852A (en) * 1996-02-13 1998-12-22 Northrop Grumman Corporation Die attached process for SiC
US6111316A (en) * 1997-08-29 2000-08-29 Motorola, Inc. Electronic component encapsulated in a glass tube
JP4724355B2 (ja) * 2003-03-31 2011-07-13 ルネサスエレクトロニクス株式会社 半導体装置
IT1402530B1 (it) 2010-10-25 2013-09-13 St Microelectronics Srl Circuiti integrati con retro-metallizzazione e relativo metodo di produzione.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011779A (ja) * 1973-06-04 1975-02-06

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT197436B (de) * 1955-06-13 1958-04-25 Philips Nv Verfahren zum Anbringen eines Kontaktes auf Silizium
US3025439A (en) * 1960-09-22 1962-03-13 Texas Instruments Inc Mounting for silicon semiconductor device
US3361592A (en) * 1964-03-16 1968-01-02 Hughes Aircraft Co Semiconductor device manufacture
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3520720A (en) * 1966-12-13 1970-07-14 Hughes Aircraft Co Dies and diode and method
US3458778A (en) * 1967-05-29 1969-07-29 Microwave Ass Silicon semiconductor with metal-silicide heterojunction
US3409974A (en) * 1967-07-07 1968-11-12 Alloys Unltd Inc Process of making tungsten-based composite materials
NL6710184A (ja) * 1967-07-22 1969-01-24
US3508124A (en) * 1968-03-11 1970-04-21 Sylvania Electric Prod Semiconductor device and method of manufacture
US3716907A (en) * 1970-11-20 1973-02-20 Harris Intertype Corp Method of fabrication of semiconductor device package
US3893229A (en) * 1973-10-29 1975-07-08 Gen Electric Mounting for light-emitting diode pellet and method for the fabrication thereof
US3909929A (en) * 1973-12-26 1975-10-07 Gen Electric Method of making contacts to semiconductor light conversion elements

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011779A (ja) * 1973-06-04 1975-02-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011102429A (ja) * 2009-08-25 2011-05-26 Rohm & Haas Electronic Materials Llc ケイ化ニッケルの向上した形成方法

Also Published As

Publication number Publication date
DE2643147A1 (de) 1977-04-07
GB1541647A (en) 1979-03-07
US4042951A (en) 1977-08-16

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