JPS5245878A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5245878A JPS5245878A JP50120727A JP12072775A JPS5245878A JP S5245878 A JPS5245878 A JP S5245878A JP 50120727 A JP50120727 A JP 50120727A JP 12072775 A JP12072775 A JP 12072775A JP S5245878 A JPS5245878 A JP S5245878A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- semiconductor device
- junction depth
- emitter region
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: An emitter region having a second junction depth is provided to the surroundings of an emitter region having a first emitter junction depth, and an electrode is attached to the the former emitter only, whereby a semiconductor having low base resistance and good dielectric strength between emitter and base is obtained.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50120727A JPS5245878A (en) | 1975-10-08 | 1975-10-08 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50120727A JPS5245878A (en) | 1975-10-08 | 1975-10-08 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5245878A true JPS5245878A (en) | 1977-04-11 |
Family
ID=14793494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50120727A Pending JPS5245878A (en) | 1975-10-08 | 1975-10-08 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5245878A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4536950A (en) * | 1983-02-10 | 1985-08-27 | Matsushita Electric Industrial Co., Ltd. | Method for making semiconductor device |
-
1975
- 1975-10-08 JP JP50120727A patent/JPS5245878A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4536950A (en) * | 1983-02-10 | 1985-08-27 | Matsushita Electric Industrial Co., Ltd. | Method for making semiconductor device |
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