JPS5247319B2 - - Google Patents

Info

Publication number
JPS5247319B2
JPS5247319B2 JP50072123A JP7212375A JPS5247319B2 JP S5247319 B2 JPS5247319 B2 JP S5247319B2 JP 50072123 A JP50072123 A JP 50072123A JP 7212375 A JP7212375 A JP 7212375A JP S5247319 B2 JPS5247319 B2 JP S5247319B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50072123A
Other languages
Japanese (ja)
Other versions
JPS5112778A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5112778A publication Critical patent/JPS5112778A/ja
Publication of JPS5247319B2 publication Critical patent/JPS5247319B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67Complementary BJTs
    • H10D84/673Vertical complementary BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • H10P90/1906Preparing SOI wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/031Manufacture or treatment of isolation regions comprising PN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/061Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/181Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30Isolation regions comprising PN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/17Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP50072123A 1974-06-18 1975-06-16 Handotaisochi oyobi sonoseizohoho Granted JPS5112778A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7408110A NL7408110A (nl) 1974-06-18 1974-06-18 Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
JPS5112778A JPS5112778A (en) 1976-01-31
JPS5247319B2 true JPS5247319B2 (fr) 1977-12-01

Family

ID=19821569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50072123A Granted JPS5112778A (en) 1974-06-18 1975-06-16 Handotaisochi oyobi sonoseizohoho

Country Status (13)

Country Link
JP (1) JPS5112778A (fr)
AU (1) AU499052B2 (fr)
BE (1) BE830286A (fr)
BR (1) BR7503777A (fr)
CA (1) CA1029134A (fr)
CH (1) CH588166A5 (fr)
DE (1) DE2525529B2 (fr)
ES (1) ES438593A1 (fr)
FR (1) FR2275884A1 (fr)
GB (1) GB1505103A (fr)
IT (1) IT1046053B (fr)
NL (1) NL7408110A (fr)
SE (1) SE407996B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204898A (en) * 1981-06-02 1982-12-15 Saito Masayasu Pump for vessel for dividing liquid little by little

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7710164A (nl) * 1977-09-16 1979-03-20 Philips Nv Werkwijze ter behandeling van een eenkristal- lijn lichaam.
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
US4232328A (en) * 1978-12-20 1980-11-04 Bell Telephone Laboratories, Incorporated Dielectrically-isolated integrated circuit complementary transistors for high voltage use
GB2060252B (en) * 1979-09-17 1984-02-22 Nippon Telegraph & Telephone Mutually isolated complementary semiconductor elements
JP2531824Y2 (ja) * 1987-02-13 1997-04-09 株式会社 神崎高級工機製作所 油圧クラツチ式変速装置
JPS63142451U (fr) * 1987-03-12 1988-09-20
US5070382A (en) * 1989-08-18 1991-12-03 Motorola, Inc. Semiconductor structure for high power integrated circuits
US7076124B2 (en) * 2002-12-20 2006-07-11 Avago Technologies, Ltd. Integrated multichannel laser driver and photodetector receiver
EP4372792A1 (fr) * 2022-11-16 2024-05-22 Infineon Technologies Dresden GmbH & Co . KG Dispositif semi-conducteur

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204898A (en) * 1981-06-02 1982-12-15 Saito Masayasu Pump for vessel for dividing liquid little by little

Also Published As

Publication number Publication date
IT1046053B (it) 1980-06-30
FR2275884B1 (fr) 1980-10-24
SE407996B (sv) 1979-04-30
NL7408110A (nl) 1975-12-22
AU499052B2 (en) 1979-04-05
FR2275884A1 (fr) 1976-01-16
BE830286A (fr) 1975-12-16
GB1505103A (en) 1978-03-22
SE7506878L (sv) 1975-12-19
DE2525529A1 (de) 1976-01-08
DE2525529B2 (de) 1977-08-04
CH588166A5 (fr) 1977-05-31
JPS5112778A (en) 1976-01-31
ES438593A1 (es) 1977-01-16
AU8214975A (en) 1976-12-23
BR7503777A (pt) 1976-07-06
CA1029134A (fr) 1978-04-04

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