ES438593A1 - Perfeccionamientos introducidos en un dispositivo semicon- ductor. - Google Patents

Perfeccionamientos introducidos en un dispositivo semicon- ductor.

Info

Publication number
ES438593A1
ES438593A1 ES438593A ES438593A ES438593A1 ES 438593 A1 ES438593 A1 ES 438593A1 ES 438593 A ES438593 A ES 438593A ES 438593 A ES438593 A ES 438593A ES 438593 A1 ES438593 A1 ES 438593A1
Authority
ES
Spain
Prior art keywords
conductivity
type
epitaxial layer
epitaxial
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES438593A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES438593A1 publication Critical patent/ES438593A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
ES438593A 1974-06-18 1975-06-16 Perfeccionamientos introducidos en un dispositivo semicon- ductor. Expired ES438593A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7408110A NL7408110A (nl) 1974-06-18 1974-06-18 Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan.

Publications (1)

Publication Number Publication Date
ES438593A1 true ES438593A1 (es) 1977-01-16

Family

ID=19821569

Family Applications (1)

Application Number Title Priority Date Filing Date
ES438593A Expired ES438593A1 (es) 1974-06-18 1975-06-16 Perfeccionamientos introducidos en un dispositivo semicon- ductor.

Country Status (13)

Country Link
JP (1) JPS5112778A (fr)
AU (1) AU499052B2 (fr)
BE (1) BE830286A (fr)
BR (1) BR7503777A (fr)
CA (1) CA1029134A (fr)
CH (1) CH588166A5 (fr)
DE (1) DE2525529B2 (fr)
ES (1) ES438593A1 (fr)
FR (1) FR2275884A1 (fr)
GB (1) GB1505103A (fr)
IT (1) IT1046053B (fr)
NL (1) NL7408110A (fr)
SE (1) SE407996B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7710164A (nl) * 1977-09-16 1979-03-20 Philips Nv Werkwijze ter behandeling van een eenkristal- lijn lichaam.
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
US4232328A (en) * 1978-12-20 1980-11-04 Bell Telephone Laboratories, Incorporated Dielectrically-isolated integrated circuit complementary transistors for high voltage use
GB2060252B (en) * 1979-09-17 1984-02-22 Nippon Telegraph & Telephone Mutually isolated complementary semiconductor elements
JPS57204898A (en) * 1981-06-02 1982-12-15 Saito Masayasu Pump for vessel for dividing liquid little by little
JP2531824Y2 (ja) * 1987-02-13 1997-04-09 株式会社 神崎高級工機製作所 油圧クラツチ式変速装置
JPS63142451U (fr) * 1987-03-12 1988-09-20
US5070382A (en) * 1989-08-18 1991-12-03 Motorola, Inc. Semiconductor structure for high power integrated circuits
US7076124B2 (en) * 2002-12-20 2006-07-11 Avago Technologies, Ltd. Integrated multichannel laser driver and photodetector receiver
EP4372792A1 (fr) * 2022-11-16 2024-05-22 Infineon Technologies Dresden GmbH & Co . KG Dispositif semi-conducteur

Also Published As

Publication number Publication date
IT1046053B (it) 1980-06-30
FR2275884B1 (fr) 1980-10-24
SE407996B (sv) 1979-04-30
NL7408110A (nl) 1975-12-22
AU499052B2 (en) 1979-04-05
FR2275884A1 (fr) 1976-01-16
BE830286A (fr) 1975-12-16
GB1505103A (en) 1978-03-22
SE7506878L (sv) 1975-12-19
DE2525529A1 (de) 1976-01-08
DE2525529B2 (de) 1977-08-04
CH588166A5 (fr) 1977-05-31
JPS5112778A (en) 1976-01-31
AU8214975A (en) 1976-12-23
JPS5247319B2 (fr) 1977-12-01
BR7503777A (pt) 1976-07-06
CA1029134A (fr) 1978-04-04

Similar Documents

Publication Publication Date Title
EP0272453A3 (fr) Technologie bipolaire/CMOS jointe utilisant une tranchée électriquement active
ES438593A1 (es) Perfeccionamientos introducidos en un dispositivo semicon- ductor.
EP0386413A3 (fr) Structure transistor complémentaire et procédé pour sa fabrication
ES421881A1 (es) Dispositivo semiconductor de varias uniones.
SE7714902L (sv) Effekttransistor
GB1533156A (en) Semiconductor integrated circuits
ES402165A1 (es) Un dispositivo semiconductor monolitico.
KR850003478A (ko) 절연기판 실리콘내에 형성된 레이터랄 바이폴라 트랜지스터
JPS6467972A (en) Power mosfet
GB1531811A (en) Complementary transistors and their manufacture
GB1021147A (en) Divided base four-layer semiconductor device
ES460687A1 (es) Un semiconductor planar perfeccionado.
GB1496306A (en) Semiconductor integrated circuit including an epitaxial base type vertical transistor
GB1362852A (en) High frequency planar transistor employing highly resistive guard ring
KR860001488A (ko) 바이폴러 트랜지스터와 iil이 있는 반도체 장치
GB1429696A (fr)
JPS56157042A (en) Manufacture of semiconductor device
GB1252097A (fr)
FR2347777A1 (fr) Procede simplifie de fabrication de transistors complementaires et structures ainsi obtenues
FR2257999A1 (en) Integrated cct with low collector resistance transistor - has layer zone in semiconductor substrate both provided with layer zone of opposite conductivity
JPS5732664A (en) Semiconductor integrated circuit device
JPS5371572A (en) Manufacture of lateral pnp transistor
ES368826A1 (es) Un dispositivo semiconductor.
JPS54101289A (en) Semiconductor device
JPS5263080A (en) Production of semiconductor integrated circuit device