JPS5253677A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5253677A JPS5253677A JP50129209A JP12920975A JPS5253677A JP S5253677 A JPS5253677 A JP S5253677A JP 50129209 A JP50129209 A JP 50129209A JP 12920975 A JP12920975 A JP 12920975A JP S5253677 A JPS5253677 A JP S5253677A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- increase
- hfe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To increase the degree of freedom of designing against emitter bias effect, hFE and increase current density by isolating base and collector with the V-form grooves formed on crystal face by anisotropic etching.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50129209A JPS5253677A (en) | 1975-10-29 | 1975-10-29 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50129209A JPS5253677A (en) | 1975-10-29 | 1975-10-29 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5253677A true JPS5253677A (en) | 1977-04-30 |
Family
ID=15003821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50129209A Pending JPS5253677A (en) | 1975-10-29 | 1975-10-29 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5253677A (en) |
-
1975
- 1975-10-29 JP JP50129209A patent/JPS5253677A/en active Pending
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