JPS51118392A - Manuforcturing process for semiconductor unit - Google Patents

Manuforcturing process for semiconductor unit

Info

Publication number
JPS51118392A
JPS51118392A JP50043972A JP4397275A JPS51118392A JP S51118392 A JPS51118392 A JP S51118392A JP 50043972 A JP50043972 A JP 50043972A JP 4397275 A JP4397275 A JP 4397275A JP S51118392 A JPS51118392 A JP S51118392A
Authority
JP
Japan
Prior art keywords
semiconductor unit
manuforcturing
film
oxydized
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50043972A
Other languages
Japanese (ja)
Inventor
Kazuhiko Tsuji
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50043972A priority Critical patent/JPS51118392A/en
Publication of JPS51118392A publication Critical patent/JPS51118392A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: Manufacturing process for semiconductor unit in which the field oxydized film is not etched bu the etching film of gate oxydized film, and gives no bad influence on elements.
COPYRIGHT: (C)1976,JPO&Japio
JP50043972A 1975-04-10 1975-04-10 Manuforcturing process for semiconductor unit Pending JPS51118392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50043972A JPS51118392A (en) 1975-04-10 1975-04-10 Manuforcturing process for semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50043972A JPS51118392A (en) 1975-04-10 1975-04-10 Manuforcturing process for semiconductor unit

Publications (1)

Publication Number Publication Date
JPS51118392A true JPS51118392A (en) 1976-10-18

Family

ID=12678617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50043972A Pending JPS51118392A (en) 1975-04-10 1975-04-10 Manuforcturing process for semiconductor unit

Country Status (1)

Country Link
JP (1) JPS51118392A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802048A1 (en) 1977-01-26 1978-07-27 Mostek Corp METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
JPS55105350A (en) * 1979-02-07 1980-08-12 Nec Corp Semiconductor device
DE2858815C2 (en) * 1977-01-26 1996-01-18 Sgs Thomson Microelectronics Substrate surface prodn. for isoplanar semiconductor device
US5668028A (en) * 1993-11-30 1997-09-16 Sgs-Thomson Microelectronics, Inc. Method of depositing thin nitride layer on gate oxide dielectric

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50137086A (en) * 1974-04-17 1975-10-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50137086A (en) * 1974-04-17 1975-10-30

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802048A1 (en) 1977-01-26 1978-07-27 Mostek Corp METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
JPS62290180A (en) * 1977-01-26 1987-12-17 モステツク・コ−ポレイシヨン Manufacture of semiconductor device
DE2858815C2 (en) * 1977-01-26 1996-01-18 Sgs Thomson Microelectronics Substrate surface prodn. for isoplanar semiconductor device
JPS55105350A (en) * 1979-02-07 1980-08-12 Nec Corp Semiconductor device
US5668028A (en) * 1993-11-30 1997-09-16 Sgs-Thomson Microelectronics, Inc. Method of depositing thin nitride layer on gate oxide dielectric
US5710453A (en) * 1993-11-30 1998-01-20 Sgs-Thomson Microelectronics, Inc. Transistor structure and method for making same
US6780718B2 (en) 1993-11-30 2004-08-24 Stmicroelectronics, Inc. Transistor structure and method for making same
US7459758B2 (en) 1993-11-30 2008-12-02 Stmicroelectronics, Inc. Transistor structure and method for making same
US7704841B2 (en) 1993-11-30 2010-04-27 Stmicroelectronics, Inc. Transistor structure and method for making same

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