JPS5257740A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- JPS5257740A JPS5257740A JP50133077A JP13307775A JPS5257740A JP S5257740 A JPS5257740 A JP S5257740A JP 50133077 A JP50133077 A JP 50133077A JP 13307775 A JP13307775 A JP 13307775A JP S5257740 A JPS5257740 A JP S5257740A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor memory
- self
- memory cell
- data line
- same time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:The diffusion region is formed in a self-matching way with use of the 2nd-class poly Si formation mask. Thus, the memory cell area as well as data line capacity can be reduced, at the same time facilitating manufacture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50133077A JPS5921180B2 (en) | 1975-11-07 | 1975-11-07 | hand tie memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50133077A JPS5921180B2 (en) | 1975-11-07 | 1975-11-07 | hand tie memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5257740A true JPS5257740A (en) | 1977-05-12 |
| JPS5921180B2 JPS5921180B2 (en) | 1984-05-18 |
Family
ID=15096295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50133077A Expired JPS5921180B2 (en) | 1975-11-07 | 1975-11-07 | hand tie memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5921180B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63127566A (en) * | 1986-11-17 | 1988-05-31 | Nec Corp | Mis type semiconductor memory device |
-
1975
- 1975-11-07 JP JP50133077A patent/JPS5921180B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63127566A (en) * | 1986-11-17 | 1988-05-31 | Nec Corp | Mis type semiconductor memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5921180B2 (en) | 1984-05-18 |
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